| 1. |
- Akbari, Maryam, et al.
(author)
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An Ultra-compact Pure Magnetic Arbiter PUF with High Reliability and Low Power Consumption
- 2023
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In: IEEE transactions on nanotechnology. - Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 22, s. 449-456
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Journal article (peer-reviewed)abstract
- Due to the rugged environmental factors in IoT applications and constrained on-chip resources, PUF, as a critical hardware primitive, is a promising solution for key storage, authentication, and ID generation. The existing CMOS-based Arbiter PUFs mainly suffer from low reliability and vulnerability against modeling attacks. In this paper, the proposed PUF utilizes mCell devices, a class of Magnetoresistive devices employing only Magnetic Tunnel Junction (MTJ) devices, as a building block. Also, a novel nonvolatile latch is proposed to act as an arbiter and generates the responses by comparing the current values instead of delays which leads to increased the reliability by subtracting the constant variation rates of MTJs under environmental variation without adding hardware overhead. The characteristics of MTJ like nonvolatility, stochastic switching, chaotic magnetization, low power consumption, and low occupied area have made the proposed PUF to a low power, highly reliable, high randomness and ultra-compact pure magnetic arbiter PUF. The Monte Carlo HSPICE simulation results reveal that the uniformity, uniqueness, bit-aliasing, power consumption, and area of the proposed PUF are 49.24 %, 49.87 %, 48.64 %, 10.771 μW and 0.106 μm2, respectively. In addition, the average BER across a wide temperature range (-50∘ C 150∘ C) and voltage range (0.05 V-0.1 V) is 0.08 % and 0.18 %, respectively. © IEEE
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| 2. |
- Albertsson, Dagur Ingi, et al.
(author)
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A Magnetic Field-to-Digital Converter Employing a Spin-Torque Nano-Oscillator
- 2020
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In: IEEE transactions on nanotechnology. - : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 19, s. 565-570
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Journal article (peer-reviewed)abstract
- In this work, a novel magnetic field-to-digital converter based on emerging spin-torque nano-oscillators (STNOs) is proposed. The architecture is inspired by voltage controlled oscillator (VCO)-based analog-to-digital converters (ADCs) which have shown inherent first-order noise shaping of both quantization- and phase-noise without the need for feedback. In the proposed architecture, the STNO acts both as a magnetic field sensor and VCO. The architecture's performance is evaluated in terms of signal-to-noise and distortion ratio (SNDR) utilizing Verilog-AMS modeling, where a macrospin model fitted to experimental data is employed for accurate description of the STNO operation. The presented simulation results demonstrate the potential of the STNO-based magnetic field-to-digital converter architecture.
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| 3. |
- Albertsson, D. I., et al.
(author)
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A Magnetic Field-to-Digital Converter Employing a Spin-Torque Nano-Oscillator
- 2020
-
In: Ieee Transactions on Nanotechnology. - : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 19, s. 565-570
-
Journal article (peer-reviewed)abstract
- In this work, a novel magnetic field-to-digital converter based on emerging spin-torque nano-oscillators (STNOs) is proposed. The architecture is inspired by voltage controlled oscillator (VCO)-based analog-to-digital converters (ADCs) which have shown inherent first-order noise shaping of both quantization- and phase-noise without the need for feedback. In the proposed architecture, the STNO acts both as a magnetic field sensor and VCO. The architecture's performance is evaluated in terms of signal-to-noise and distortion ratio (SNDR) utilizing Verilog-AMS modeling, where a macrospin model fitted to experimental data is employed for accurate description of the STNO operation. The presented simulation results demonstrate the potential of the STNO-based magnetic field-to-digital converter architecture.
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| 4. |
- Andric, Stefan, et al.
(author)
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Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
- 2021
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In: IEEE Transactions on Nanotechnology. - 1536-125X. ; 20, s. 434-440
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Journal article (peer-reviewed)abstract
- Vertical III-V nanowire MOSFETs show potential towards the ultimate transistor scaling. A high transconductance and current density are achieved based on the gate-all-around architecture. This work presents a high-frequency design of such devices, achieving more than 600 GHz cut-off frequencies (fT, fmax), at 20 nm gate length. Furthermore, capacitance design and scaling trends, supported by COMSOL Multiphysics simulations derive state-of-the-art parasitics magnitudes for vertical devices in general, reaching gate-drain capacitance values of 17 aF/wire, corresponding to 0.2 fF/m. A unique co-designed feedback resonant circuit makes the device unilateral, exhibiting up to 15 dB gain in D-band at 0.5 V supply, and with a current density of 0.5 mA/m. Finally, a 2-stage low noise amplifier is designed using an optimum matching concept to utilize the full available bandwidth. The resulting circuit performance is independent of transistor gate length, since any decrease in device intrinsic capacitance is assisted by an increase in device overlap capacitances in a setting unique to a current implementation of vertical nanowire MOSFETs. With this approach, amplifiers are designed with more than 20 dB gain and minimum noise figure of 2.5 dB in a simulation environment at 140 GHz. The proposed technology and design platform show a great potential in future low-power communication systems.
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| 5. |
- Fransson, Jonas, et al.
(author)
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A physical compact model for electron transport across single molecules
- 2006
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In: IEEE transactions on nanotechnology. - 1536-125X .- 1941-0085. ; 5:6, s. 745-749
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Journal article (peer-reviewed)abstract
- Prediction of current flow across single molecules requires ab initio electronic structure calculations along with their associated high computational demand, and a means for incorporating open system boundary conditions to describe the voltage sources driving the current. To date, first principle predictions of electron transport across single molecules have not fully achieved a predictive capability. The situation for molecular electronics may be compared to conventional technology computer-aided design (TCAD), whereby various approximations to the Boltzmann transport equation are solved to predict electronic device behavior, but in practice are too time consuming for most circuit design applications. To simplify device models for circuit design, analytical but physically motivated models are introduced to capture the behavior of active and passive devices; however, similar models do not vet exist for molecular electronics. We follow a similar approach by evaluating an analytical model achieved by combining a mesoscopic transport model with parameterizations taken from quantum chemical calculations of the electronic structure of single molecule bonded between two metal contacts. Using the model to describe electron transport across benzene- 1,4-dithiol and by comparing to experiment, we are able to extract the coupling strength of the molecule attached to two infinite metal electrodes. The resulting procedure allows for accurate and computationally efficient modeling of the static (dc) characteristics of a single molecule, with the added capability of being able to study the physical model parameter variations across a range of experiments. Such simple physical models are also an important step towards developing a design methodology for molecular electronics.
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| 6. |
- Jänis, Anna, 1970, et al.
(author)
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Dielectric Properties of SiC nanowires With Different Chemical Compositions
- 2011
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In: IEEE Transactions on Nanotechnology. - 1941-0085 .- 1536-125X. ; 10:4, s. 751-756
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Journal article (peer-reviewed)abstract
- The investigated SiC nanowires were prepared by the “Shape Memory Process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e. with varying amount of Si, C and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz which revealed that the permittivity, both real and imaginary parts, depends mostly on the C-content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.
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| 7. |
- Kish, Laszlo B., et al.
(author)
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Fluctuation-Enhanced Sensing for Biological Agent Detection and Identification
- 2011
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In: IEEE transactions on nanotechnology. - 1536-125X .- 1941-0085. ; 10:6, s. 1238-1242
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Journal article (peer-reviewed)abstract
- We survey and show our earlier results about three different ways of fluctuation-enhanced sensing of bio agent, 1) the phage-based method for bacterium detection published earlier; 2) sensing and evaluating the odors of microbes; and 3) spectral and amplitude distribution analysis of noise in light scattering to identify spores based on their diffusion coefficient.
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| 8. |
- Kolahdouz, Mohammadreza, et al.
(author)
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Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
- 2009
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In: IEEE transactions on nanotechnology. - : Institute of Electrical and Electronics Engineers (IEEE). - 1536-125X .- 1941-0085. ; 8:3, s. 291-297
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Journal article (peer-reviewed)abstract
- The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested.
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| 9. |
- Kolahdouz, Mohammadreza, et al.
(author)
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Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
- 2009
-
In: IEEE transactions on nanotechnology. - : IEEE. - 1536-125X .- 1941-0085. ; 8:3, s. 291-297
-
Journal article (peer-reviewed)abstract
- The influence of chip layout and architecture on thepattern dependency of selective epitaxy of B-doped SiGe layers hasbeen studied. The variations of Ge-, B-content, and growth ratehave been investigated locally within a wafer and globally fromwafer to wafer. The results are described by the gas depletion theory.Methods to control the variation of layer profile are suggested.
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| 10. |
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