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  • Östling, Mikael, et al. (author)
  • Towards Schottky-Barrier Source/Drain MOSFETs
  • 2008
  • In: 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4. - NEW YORK : IEEE. - 9781424421855 ; , s. 146-149
  • Conference paper (peer-reviewed)abstract
    • This paper provides an overview of metal source/drain (S/D) Schottky-barrier (SB) MOSFET technology. The technology offers several benefits for scaling CMOS, i.e., extremely low source/drain resistance, sharp junctions from S/D to channel and low temperature processing. A successful implementation of the technology needs to overcome new obstacles such as SB height engineering and precise control of silicide growth. Device design factors such as S/D to gate underlap, Si film thickness and oxide thickness affect device performance owing to their effects on the SB width. In the past two years several groups have demonstrated high-performance SB MOSFETs, which places the technology as a promising candidate for future generations of CMOS technology.
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Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Hellström, Per-Erik (1)
Östling, Mikael (1)
Malm, B. Gunnar (1)
Zhang, Shi-Li (1)
Zhang, Zhen (1)
Gudmundsson, Valur (1)
University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2008 (1)

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