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- Mohammadi, Babak, et al.
(author)
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Sizing of Dual-V-T Gates for Sub-V-T Circuits
- 2012
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In: 2012 IEEE Subthreshold Microelectronics Conference (SubVT). - 9781467315869
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Conference paper (peer-reviewed)abstract
- This paper presents a novel method to improve the performance of sub-threshold (sub-V-T) gates in 65-nm CMOS technology. Faster transistors with a lower threshold voltage are introduced in the weaker network of a gate. It is shown that the employed method significantly enhances the reliability and performance of the gate, with an additive advantage of a lower area cost compared to traditional transistor sizing. Extensive Monte-Carlo simulations are carried out to verify the proposed optimization technique. The simulation results predict that the NAND3 and NOR3 testbench shows a 98% higher noise margin. Furthermore, the inverter and NAND3 gates show an speed improvement of 48% and 97%, respectively.
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