| 1. |
- Eriksson, Klas, 1983, et al.
(författare)
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InP DHBT wideband amplifiers with up to 235 GHz bandwidth
- 2014
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781479938698 ; , s. Art. no. 6848436-
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Konferensbidrag (refereegranskat)abstract
- Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology. The amplifiers are designed using cascode cells, in a distributed amplifier topology, with simple on-chip resistive bias circuitry. A single stage design achieves 7.5 dB gain and 192 GHz bandwidth and a 2-cascaded distributed amplifier achieves gain in excess of 16 dB and with bandwidth exceeding 235 GHz, thus being the widest band amplifiers reported to date.
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| 2. |
- Valenta, V, et al.
(författare)
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High performance transmit/receive modules in 0.13 um SiGe:C BiCMOS for short range F-band MIMO radars
- 2014
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Ingår i: 2014 IEEE MTT-S International Microwave Symposium (IMS). - 9781479938698
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Konferensbidrag (refereegranskat)abstract
- Transmit and Receive (TX/RX) F-band radar modules are presented. Both modules are implemented in a state of the art SiGe:C BiCMOS featuring high-speed HBTs with f(T)/f(max) of 300/500 GHz. The TX is based on a frequency octupler that consists of a cascade of three Gilbert cells, covering the upper F-band from 120-140 GHz and providing differential output power of up to 6 dBm, the highest values reported to date for BiCMOS. The RX uses the identical frequency octupler followed by a mixer, transformer and a differential LNA, giving altogether conversion gain of 25 dB. Both chips are packaged and connected to off-chip patch antennas using bondwire interconnects with dedicated compensation structures. Initial measurement trials proved full functionality of the realized frontend across 114-152 GHz. It has also been demonstrated that wire-bonding, when properly designed, is still an attractive solution for chip to antenna interconnects even above 110 GHz.
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| 3. |
- ÖZEN, MUSTAFA, 1984, et al.
(författare)
-
Symmetrical doherty amplifier with high efficiency over large output power dynamic range
- 2014
-
Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781479938698
-
Konferensbidrag (refereegranskat)abstract
- For the conventional Doherty power amplifiers, asymmetrical cells are used to achieve high efficiency over large (> 6 dB) output power dynamic ranges, i.e. larger class-C cell. In this paper, it will be theoretically proven that high efficiency over large dynamic ranges also can be achieved using symmetrical devices, while still maintaining full voltage and current swing of both transistor cells. Using a smaller class-C cell compared to the asymmetrical Doherty has the advantages of higher gain and power added efficiency (PAE). The proposed symmetrical Doherty concept is experimentally verified by a 3.5 GHz 28 Watt circuit demonstrator fabricated using identical GaN HEMT devices. An average power added efficiency of 52% and adjacent power leakage ratio of -52 dB is obtained with 9 dB peak-to-average power-ratio 20 MHz LTE test signals.
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