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1.	Sychugov, Ilya, et al. (author) Optical Properties of a Silicon Nanocrystal 2009 In: Nanocrystals. - New York : Nova Science. - 9781608767441 ; , s. 197-216 Book chapter (peer-reviewed)abstract Basic optical properties of a silicon nanocrystal are discussed based on results from single-dot spectroscopy experiments. Luminescence linewidth and its temperature behavior, time dependency of the intensity trace and strong variations from dot-to-dot are particularly addressed. It appears that the fundamental optical features of a silicon nanocrystal are similar to that of its direct bandgap semiconductor counterpart, while in general preserving the indirect bandgap structure of bulk silicon. One of possible ways to modify its characteristics is to alter the local density of optical modes (LDOS) around this nano-emitter. The influence of LDOS is discussed based on experimental observations of substrate proximity and photonic bandgap effects. It is shown how the silicon nanocrystal excitation lifetime, luminescence yield and quantum efficiency can be modified in this way. By proper ‘nano-engineering’ this may lead to enhanced radiative properties useful for future applications.

Sychugov, Ilya, et al. (author)
Optical Properties of a Silicon Nanocrystal
2009
In: Nanocrystals. - New York : Nova Science. - 9781608767441 ; , s. 197-216
Book chapter (peer-reviewed)abstract
- Basic optical properties of a silicon nanocrystal are discussed based on results from single-dot spectroscopy experiments. Luminescence linewidth and its temperature behavior, time dependency of the intensity trace and strong variations from dot-to-dot are particularly addressed. It appears that the fundamental optical features of a silicon nanocrystal are similar to that of its direct bandgap semiconductor counterpart, while in general preserving the indirect bandgap structure of bulk silicon. One of possible ways to modify its characteristics is to alter the local density of optical modes (LDOS) around this nano-emitter. The influence of LDOS is discussed based on experimental observations of substrate proximity and photonic bandgap effects. It is shown how the silicon nanocrystal excitation lifetime, luminescence yield and quantum efficiency can be modified in this way. By proper ‘nano-engineering’ this may lead to enhanced radiative properties useful for future applications.

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