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1.	Angelov, Iltcho, 1943, et al. (author) Large-Signal Modelling and Comparison of AlGaN/GaN HEMTs and SiC MESFETs 2006 In: IEEE Asia PAcific Microwave Conference, 2006, Yokohama, Japan. - 9784902339116 ; , s. 279-282 Conference paper (peer-reviewed)abstract The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and provide. a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibit good overall accuracy.

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Author/Editor: Zirath, Herbert, 195 ... (1); Angelov, Iltcho, 194 ... (1); Desmaris, Vincent, 1 ... (1); Rorsman, Niklas, 196 ... (1); Andersson, Kristoffe ... (1); Sudow, Mattias, 1980 (1); show more...; Schreuers, D (1); show less...

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