| 1. |
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| 2. |
- Ashwin, M.J., et al.
(författare)
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The bonding of CAs acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon
- 1996
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 80:12, s. 6754-6760
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Tidskriftsartikel (refereegranskat)abstract
- InxGa1-xAs layers (0≤x≤0.37) doped with carbon (>1020 cm-3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A-1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H-CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm-1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm-1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In-CAs bonds as well as Ga-CAs bonds are formed, whereas there is no evidence for the formation of In-CAs bonds in samples doped with C derived from trimethylgallium or solid sources
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| 3. |
- Carvalho, A., et al.
(författare)
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Identification of the local vibrational modes of small nitrogen clusters in dilute GaAsN
- 2007
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Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 401-402, s. 339-342
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Tidskriftsartikel (refereegranskat)abstract
- Ultra-high-resolution infra-red local vibrational mode (IR LVM) spectroscopy measurements together with density-functional calculations have been used to identify the signatures of close substitutional nitrogen (NAs) pairs in GaAs1 - x Nx alloys with concentrations of x < 0.025. We show that the presence of sub-peaks close to the NAs absorption band can be attributed to nitrogen pairs up to fourth neighbor position. Additionally, we suggest that the nitrogen pairs which give rise to the deepest levels below the conduction band edge are the first to be removed upon annealing
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| 4. |
- Latham, Chris D., et al.
(författare)
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Di-carbon complexes in AlAs and GaAs
- 1998
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Ingår i: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 210:2, s. 869-872
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Tidskriftsartikel (refereegranskat)abstract
- Heat treatment of heavily carbon doped AlAs and GaAs results in a loss of CAS shallow acceptors. In Raman scattering experiments on annealed CBE grown GaAs with 12C and 13C isotopes, and MOVPE grown AlAs it is found that the loss of carriers is accompanied by the appearance of two high frequency lines. These lie near to the stretch mode of an isolated C2 molecule (1855 cm-1). This is consistent with the formation of two types of di-carbon defects in these materials where the C atoms are bonded together and one or both of which act as a donor. Using a local density functional method to investigate the structure and dynamics of several di-carbon defects, we find that the dimer at an As site is bistable and aligned approximately in a [100] direction in the neutral charge state, and in a [110] direction when positively ionised. The calculated frequencies lie within 10% of the measured values in both materials. Other defects are investigated too with a view of determining the structures giving rise to the modes.
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| 5. |
- Leigh, R. S., et al.
(författare)
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Vibrational modes of sulfur defects in GaP
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 68:3
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Tidskriftsartikel (refereegranskat)abstract
- First principles calculations carried out on GaP containing sulfur donors 32SP (95%) and34SP (5%) show that both the neutral and ionized donors are located on substitutional sites and have weak S-Ga bonds. For the sulfur impurity in its positive charge state the calculations give gap modes for 32S and34S at frequencies close to those found experimentally. Modes within the gap are also predicted for neutral sulfur at frequencies within a few cm-1 of their charged-state counterparts. However, the SP0 donor has a very low apparent charge (i.e. oscillator strength), its calculated integrated absorption cross section being only ∼3% of that for the SP+ defect. These results support an earlier explanation of the failure to detect gap modes from SP0 in infrared measurements. Calculated and observed apparent charges for the SP+ donor are compared, and the importance of taking due account of the different geometries that apply to the theoretical calculations and infrared experiments is emphasized.
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| 6. |
- Strosberg, J., et al.
(författare)
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Phase 3 Trial of Lu-177-Dotatate for Midgut Neuroendocrine Tumors
- 2017
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Ingår i: New England Journal of Medicine. - 0028-4793 .- 1533-4406. ; 376:2, s. 125-135
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Tidskriftsartikel (refereegranskat)abstract
- BACKGROUND Patients with advanced midgut neuroendocrine tumors who have had disease progression during first-line somatostatin analogue therapy have limited therapeutic options. This randomized, controlled trial evaluated the efficacy and safety of lutetium-177 (Lu-177)-Dotatate in patients with advanced, progressive, somatostatin-receptor-positive midgut neuroendocrine tumors. METHODS We randomly assigned 229 patients who had well-differentiated, metastatic midgut neuroendocrine tumors to receive either Lu-177-Dotatate (116 patients) at a dose of 7.4 GBq every 8 weeks (four intravenous infusions, plus best supportive care including octreotide long-acting repeatable [LAR] administered intramuscularly at a dose of 30 mg) (Lu-177-Dotatate group) or octreotide LAR alone (113 patients) administered intramuscularly at a dose of 60 mg every 4 weeks (control group). The primary end point was progression-free survival. Secondary end points included the objective response rate, overall survival, safety, and the side-effect profile. The final analysis of overall survival will be conducted in the future as specified in the protocol; a prespecified interim analysis of overall survival was conducted and is reported here. RESULTS At the data-cutoff date for the primary analysis, the estimated rate of progression-free survival at month 20 was 65.2% (95% confidence interval [CI], 50.0 to 76.8) in the Lu-177-Dotatate group and 10.8% (95% CI, 3.5 to 23.0) in the control group. The response rate was 18% in the Lu-177-Dotatate group versus 3% in the control group (P<0.001). In the planned interim analysis of overall survival, 14 deaths occurred in the Lu-177-Dotatate group and 26 in the control group (P = 0.004). Grade 3 or 4 neutropenia, thrombocytopenia, and lymphopenia occurred in 1%, 2%, and 9%, respectively, of patients in the Lu-177-Dotatate group as compared with no patients in the control group, with no evidence of renal toxic effects during the observed time frame. CONCLUSIONS Treatment with Lu-177-Dotatate resulted in markedly longer progression-free survival and a significantly higher response rate than high-dose octreotide LAR among patients with advanced midgut neuroendocrine tumors. Preliminary evidence of an overall survival benefit was seen in an interim analysis; confirmation will be required in the planned final analysis. Clinically significant myelosuppression occurred in less than 10% of patients in the Lu-177-Dotatate group. (Funded by Advanced Accelerator Applications; NETTER-1 ClinicalTrials. gov number, NCT01578239; EudraCT number 2011-005049-11.)
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| 7. |
- Andersen, O., et al.
(författare)
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Electrical activity of carbon-hydrogen centers in Si
- 2002
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:23, s. 235205-1
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Tidskriftsartikel (refereegranskat)abstract
- The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.
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| 8. |
- Andersen, O., et al.
(författare)
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Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon
- 2001
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Ingår i: Physica. B, Condensed matter. - 0921-4526 .- 1873-2135. ; 308, s. 139-142
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Tidskriftsartikel (refereegranskat)abstract
- We have observed the donor (Ec-0.22 eV) and acceptor (Ec-0.16 eV) levels related to hydrogen-carbon complexes in silicon. The donor level is only detected at low temperatures after proton implantation. This hydrogen-carbon complex irreversibly reconfigures at temperatures above 225 K to a configuration characterized by the acceptor level, which is stable up to room temperature. The same acceptor level is also observed after atomic hydrogen diffusion. We have used Laplace transform deep level transient spectroscopy (DLTS) to show the influence of uniaxial stress on the electron emission process and the effect of the stress-induced alignment for the acceptor state. The pattern of the Laplace DLTS peak splittings indicate a trigonal symmetry of the defect. First principles calculations were carried out on the hydrogen-carbon defects with a view of determining their electrical levels and stress response for comparison with the experimental results.
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| 9. |
- Bangert, U., et al.
(författare)
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Electron energy loss spectroscopic studies of brown diamonds
- 2006
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Ingår i: Philosophical Magazine. - : Informa UK Limited. - 1478-6435 .- 1478-6443. ; 86:29-31, s. 4757-4779
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Tidskriftsartikel (refereegranskat)abstract
- We investigate both experimentally and theoretically, low-loss electron energy losses in brown type IIa monocrystalline diamonds both before and after high-temperature, high-pressure anneals which remove the brown colouration. We find additional losses within and near the band edge for brown diamond which are significantly reduced after treatment. The additional losses are not associated with dislocations. Graphitic inclusions are detected by EELS as well as TEM studies for some brown diamonds before treatment. These lead to pronounced subgap absorption. However, all brown diamonds exhibit additional losses which are due to point defects lying in the regions between dislocations. First principles theoretical modelling shows that common dislocations are not responsible for the brown colouration but a -bonded vacancy disk lying on {111} planes gives broad bands lying in the diamond band gap, possesses an optical absorption spectrum similar to that of brown diamond, and leads to additional electron energy losses in the band edge region. These and similar defects are suggested to be responsible for the brown colouration. Mechanisms are proposed for their formation and removal.
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| 10. |
- Coutinho, J., et al.
(författare)
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Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si
- 2003
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 68:18, s. 184106-1
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Tidskriftsartikel (refereegranskat)abstract
- The piezospectroscopic properties of the VOH defect in Si are found using stress Laplace deep level transient spectroscopy (DLTS) and are compared with local density-functional calculations of (i) the acceptor level and its shift under stress, and (ii) the alignment of the neutral center under stress. The theory is able to account for two acceptor levels observed for 〈100〉, 〈111〉, and 〈110〉 stress even though additional splitting is expected for a defect with static C1h symmetry. This is related to (i) a rapid reorientation of the H atom within the defect at temperatures at which the DLTS experiments are carried out, and (ii) the small effect of stress on two orientations of the defect under 〈110〉 stress. The theory is also able to give a quantitative account of the alignment of the center. The effect of stress on the reorientation barrier of the defect is also investigated. The reorientation barrier of the defect in its positive charge state is found theoretically to be very small, consistent with the lack of any splitting in the donor level under stress.
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