SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "WFRF:(Ščajev P) "

Search: WFRF:(Ščajev P)

  • Result 1-2 of 2
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Scajev, P., et al. (author)
  • On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures
  • 2012
  • In: HETEROSIC and WASMPE 2011. - : Trans Tech Publications Inc.. ; , s. 159-163
  • Conference paper (peer-reviewed)abstract
    • We applied a number of time-resolved optical techniques for investigation of optical and photoelectrical properties of cubic SiC grown by different technologies on different substrates. The excess carriers were injected by a short laser pulse and their dynamics was monitored by free-carrier absorption, light-induced transient grating, and photoluminescence techniques in a wide excitation range. Combining an optical and electrical probe beam delay, we found that free carrier lifetimes in differently grown layers vary from few ns up to 20 mu s. Temperature dependences of carrier diffusivity and lifetime revealed a pronounced carrier trapping in thin sublimation grown layers. In free-standing layers and thick sublimation layers, the ambipolar mobility was found the highest (120 cm(2)/Vs at room temperature). A linear correlation between the room-temperature band edge emission and carrier lifetime in differently grown layers was attributed to defect density, strongly dependent on the used growth conditions.
  •  
2.
  • Gulbinas, Karolis, et al. (author)
  • Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers
  • 2014
  • In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). - 1757-8981 .- 1757-899X. ; 56:1, s. 012005-
  • Journal article (peer-reviewed)abstract
    • Thick 6H-SiC epilayers were grown using the fast sublimation method on low-off-axis substrates. They were co-doped with N and B impurities of ≈1019 cm−3 and (41016–51018) cm−3 concentration, respectively. The epilayers exhibited donor-acceptor pair (DAP) photoluminescence. The micro-Raman spectroscopic study exposed a compensated n-6H-SiC epilayer of common quality with some 3C-SiC inclusions. The compensation ratio of B through 200 μm thick epilayer varied in 20-30% range. The free carrier diffusivity was studied by transient grating technique at high injection level. The determined ambipolar diffusion coefficient at RT was found to decrease from 1.15 cm2/s to virtually 0 cm2/s with boron concentration increasing by two orders.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-2 of 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view