| 1. |
- Achtziger, N, et al.
(author)
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Formation of passivated layers in p-type SiC by low energy ion implantation of hydrogen
- 2000
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In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2. ; , s. 933-936
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Conference paper (peer-reviewed)abstract
- The mobility of hydrogen and its passivating effect on accepters in p-type SiC is investigated. Hydrogen (isotope H-1 or H-2 alternatively) is implanted at temperatures between 300 K and 680 K with low energy (300 eV per atom) in order to minimize implantation damage. The depth profiles of 2H and of passivated accepters correspond closely. Up to 500 K, a fully passivated layer with a well defined thickness is formed. Its depth ton the order of 1 micrometer) is investigated as a function of doping level and hydrogen fluence. At higher temperatures, the incorporation drastically increases, but the electrical passivation is partial only. Qualitative explanations are given.
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| 2. |
- Achtziger, N, et al.
(author)
-
Hydrogen passivation of silicon carbide by low-energy ion implantation
- 1998
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 73, s. 945-947
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Journal article (peer-reviewed)abstract
- implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.
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| 3. |
- Achtziger, N, et al.
(author)
-
Mobility passivating effect and thermal stability of hydrogen in silicon carbide
- 1998
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In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 210, s. 395-399
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Journal article (peer-reviewed)abstract
- The diffusion and passivating effect of hydrogen (isotope H-2) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance-voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low-energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated accepters and a H+ ion drift at a surprisingly low temperature of 530 K.
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| 4. |
- Janson, Martin S., et al.
(author)
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Hydrogen in the wide bandgap semiconductor silicon carbide
- 2004
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In: Physica Scripta. - 0031-8949 .- 1402-4896. ; T108, s. 99-112
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Journal article (peer-reviewed)abstract
- In this paper we give a review of our recent results related to the incorporation of hydrogen (H) in silicon carbide (SiC) and its interaction with acceptor doping atoms and implantation induced defects. Hydrogen is an abundant impurity in the growth of epitaxial SiC since it is present in the precursor gases and since H-2 is used as the carrier gas. High concentrations of hydrogen are indeed incorporated into highly doped p-type epi-layers and it is shown that the main source is the carrier gas. Furthermore, it is revealed that the entire substrate becomes homogeneously filled with hydrogen during growth and that this hydrogen is more thermally stable than that in the epi-layer. Incorporation of hydrogen from an H-2 ambient, at temperatures considerably lower than those used for epitaxy, is also demonstrated in p-type samples coated with a catalytic metal film. This effect is most likely the cause for the increased series resistance observed in p-type SiC Schottky sensor devices using a catalytic metal gate after annealing at 600 degrees C in a H-2 containing ambient. Hydrogen is found to passivate the acceptors Al and B by forming electrically neutral H-acceptor complexes. Unlike in Si and GaAs, the two H-acceptor complexes in SiC exhibit very different dissociation energies, suggesting that the atomic configurations of the complexes are significantly different. The migration of mobile hydrogen in the presence of externally applied, or internal built-in, electric fields further reveals that hydrogen is present as H+ in p-type SiC. Finally, the redistribution and subsequent out-diffusion of low energy implanted H-1 and H-2 is investigated. Two annealing phases for the redistribution are observed, and the activation energies for the processes are extracted.
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