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- Thoma, B, et al.
(author)
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An international, interprofessional investigation of the self-reported podcast listening habits of emergency clinicians: A METRIQ Study
- 2020
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In: CJEM. - : Springer Science and Business Media LLC. - 1481-8043 .- 1481-8035. ; 22:1, s. 112-117
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Journal article (peer-reviewed)abstract
- ObjectivesPodcasts are increasingly being used for medical education. A deeper understanding of usage patterns would inform both producers and researchers of medical podcasts. We aimed to determine how and why podcasts are used by emergency medicine and critical care clinicians.MethodsAn international interprofessional sample (medical students, residents, physicians, nurses, physician assistants, and paramedics) was recruited through direct contact and a multimodal social media (Twitter and Facebook) campaign. Each participant completed a survey outlining how and why they utilize medical podcasts. Recruitment materials included an infographic and study website.Results390 participants from 33 countries and 4 professions (medicine, nursing, paramedicine, physician assistant) completed the survey. Participants most frequently listened to medical podcasts to review new literature (75.8%), learn core material (75.1%), and refresh memory (71.8%). The majority (62.6%) were aware of the ability to listen at increased speeds, but most (76.9%) listened at 1.0 x (normal) speed. All but 25 (6.4%) participants concurrently performed other tasks while listening. Driving (72.3%), exercising (39.7%), and completing chores (39.2%) were the most common. A minority of participants used active learning techniques such as pausing, rewinding, and replaying segments of the podcast. Very few listened to podcasts multiple times.ConclusionsAn international cohort of emergency clinicians use medical podcasts predominantly for learning. Their listening habits (rarely employing active learning strategies and frequently performing concurrent tasks) may not support this goal. Further exploration of the impact of these activities on learning from podcasts is warranted.
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- Rashid, S. J., et al.
(author)
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Modelling of single-crystal diamond Schottky diodes for high-voltage applications
- 2006
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In: Diamond and related materials. - : Elsevier BV. - 0925-9635 .- 1879-0062. ; 15, s. 317-323
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Journal article (peer-reviewed)abstract
- The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.
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4. |
- Rashid, S. J., et al.
(author)
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Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis
- 2008
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In: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 55:10, s. 2744-2756
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Journal article (peer-reviewed)abstract
- High-quality electronic-grade intrinsic chemical-vapor-deposited (CVD) single-crystal diamond layers having exceptionally high carrier mobilities have been reported by Isberg et al. This makes the realization of novel electronic devices in diamond, particularly for high-voltage and high-temperature applications, a viable proposition. As such, material models which can capture the particular features of diamond as a semiconductor are required to analyze, optimize, and quantitatively design new devices. For example, the incomplete ionization of boron in diamond and the transition to metallic conduction in heavily boron-doped layers require accurate carrier freeze-out models to be included in the simulation of diamond devices. Models describing these phenomena are proposed in this paper and include numerical approximation of intrinsic diamond which is necessary to formulate doping- and temperature-dependent mobility models. They enable a concise numerical description of single-crystal diamond which agrees with data obtained from material characterization. The models are verified by application to new Schottky m-i-p(+) diode structures in diamond. Simulated forward characteristics show excellent correlation with experimental measurements. In spite of the lack of impact ionization data for single-crystal diamond, approximation of avalanche coefficient parameters from other wide-bandgap semiconductors has also enabled the reverse blocking characteristics of diamond diodes to be simulated. Acceptable agreement with breakdown voltage from experimental devices made with presently available single-crystal CVD diamond is obtained.
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5. |
- Roy, Debdulal, et al.
(author)
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Does hydrogen change the fullerenelike structure in CNx thin films?
- 2009
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In: JOURNAL OF VACUUM SCIENCE and TECHNOLOGY A. - : American Vacuum Society. - 0734-2101. ; 27:5, s. 1227-1230
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Journal article (peer-reviewed)abstract
- The authors have reported the structure of the nanoclusters in carbon nitride thin films before [D. Roy , Phys. Rev. B 70, 035406 (2004)]. In this work, effects of the addition of hydrogen in the deposition gas mixture on the structures of carbon nitride thin films prepared by magnetron sputtering were investigated using Raman spectroscopy. Raman measurements showed that the structures of carbon nanoclusters remained unaffected by the addition of hydrogen in the carbon nitride films. On the other hand, the structures of amorphous thin films were affected by the addition of hydrogen in the deposition gas mixture. These are explained in terms of changes in the ratios of the D-peak to the G-peak intensities and shifts in the G-peak centers.
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