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| 2. |
- Amen, Rafael, et al.
(author)
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Solidhandboken
- 1996
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Reports (pop. science, debate, etc.)
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| 3. |
- Brinkfeldt, Klas, et al.
(author)
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Thermo-mechanical simulations and measurements on high temperature interconnections
- 2011
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In: 12th Int. Conf. on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011. - 9781457701078
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Conference paper (peer-reviewed)abstract
- In order to place sensors or electronics in very high temperature environments, new materials and methods for interconnection are required. A comparative study between different electrical interconnection methods for very high operation temperatures (500 °C - 800 °C) is presented. Thermo-mechanical simulations and characterization of samples of the interconnection types during high temperature exposure are presented. The results of the thermo-mechanical simulations showed that stresses are low in a connection system based on liquid interconnection. This system, however, proved to be difficult to realize due to problems with oxides and sealing of the metallic liquid. Modeling of an interconnection based purely on mechanical pressure without any solder or metallic bond showed high stress. This was also confirmed during high temperature exposure where the connection failed. High stress was also predicted for an interconnection based on nano-Ag paste. The high temperature tests, however, showed promising results at 800 °C for over 100 hours. © 2011 IEEE.
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| 4. |
- Edwards, Michael, et al.
(author)
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Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments
- 2010
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In: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. - 9781424485758 ; , s. 127-130
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Conference paper (peer-reviewed)abstract
- GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE.
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