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- Amirfeiz, Petra, 1973, et al.
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Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
- 2003
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In: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267-
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Conference paper (peer-reviewed)abstract
- The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
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- Bengtsson, Stefan, 1961, et al.
(author)
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Wafer bonding: A flexible way to manufacture SOI materials for high performance applications
- 2004
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In: Proc. 19th Symp. on Microelectronics Technology and Devices. ; 3, s. 241-
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Conference paper (peer-reviewed)abstract
- An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materials for high performance applications. Recent developments in wafer bonding and available techniques for formation of thin semiconductor films is presented. Furthermore, a review is given on results in use of wafer bonding for formation of advanced SOI-materials. Finally, a more detailed discussion is given on the use of wafer bonding for manufacture of SOI-materials intended for high-frequency applications and SOI-materials with films of electrically insulating but highly thermally conductive materials as buried insulators.
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