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Search: WFRF:(Aniktar H)

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1.
  • Aniktar, H, et al. (author)
  • 850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier
  • 2006
  • In: Proceedings of European Microwave Week 2006. ; , s. 403-406
  • Conference paper (peer-reviewed)abstract
    • This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.
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2.
  • Aniktar, H, et al. (author)
  • A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier
  • 2005
  • In: Proceedings of Norchip 2005.
  • Conference paper (peer-reviewed)abstract
    • In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0:25¹m CMOS process. Measurements with a 2:5V supply voltage show an output power of 18:5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated and measured results agree reasonably well.
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  • Result 1-2 of 2
Type of publication
conference paper (2)
Type of content
peer-reviewed (2)
Author/Editor
Sjöland, Henrik (2)
Aniktar, H (2)
H, Mikkelsen, J (2)
Larsen, T (2)
University
Lund University (2)
Language
English (2)
Research subject (UKÄ/SCB)
Engineering and Technology (2)

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