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- Apaydin, Dogukan, 1991, et al.
(author)
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Optically Pumped UVC Photonic Crystal Surface-Emitting Laser
- 2023
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Conference paper (other academic/artistic)abstract
- Photonic crystal surface-emitting lasers (PCSELs) are a new type of semiconductor lasers that offer a high optical output power while maintaining single-mode operation and a low divergence angle. Such devices rely upon the in-plane optical feedback from a two-dimensional photonic crystal and feature out-of-plane emission of the modes with zero group velocity at the photonic band edges by diffraction. Since the demonstration of the first PCSEL [1], the concept has been implemented in standard semiconductor materials with the demonstration of highperforming infrared and blue-emitting lasers [2, 3]. Extending the laser operation to shorter emission wavelengths would be a major breakthrough as such lasers would be of high interest for disinfection, material processing, curing, and medical treatments.
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| 2. |
- Apaydin, Dogukan, 1991, et al.
(author)
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UVC photonic crystal surface-emitting lasers with low-divergent far-fields
- 2023
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Conference paper (other academic/artistic)abstract
- Photonic crystal surface-emitting lasers (PCSEL) emitting in the ultraviolet (UV) C spectral range are exciting devices due to their low divergence and single-mode emission capable of high output powers as already demonstrated in the infrared [1] and blue spectral range [2]. This is due to their unique design, which incorporates a photonic crystal leading to a large optical gain area. PCSELs are based upon in-plane feedback from the photonic crystal and out-of-plane emission by the diffraction of the modes with zero group velocity at the photonic band edges. We recently demonstrated, to the best of our knowledge, the first UVC PCSEL with an emission at 279 nm. The device structure consists of 3 x 2 nm AlGaN quantum wells (QW) in a 60 nm Al0.70Ga0.30N waveguide and AlN cladding layers. The 140x140 μm large photonic crystal is dry etched into the top AlN cladding layer with a hexagonal lattice consisting of circular holes with a lattice constant of 140 nm and an etch depth of 65 nm, leaving 65 nm between the bottom of the photonic crystals and the first quantum well. Lasing in these PCSELs was achieved by resonant pumping of the QWs by a 266 nm pulsed laser with a spot size of 82 μm at room temperature. The devices exhibit threshold pump power densities from 25 down to 13 MW/cm2 showing a spectral narrowing down to 25 pm. Far-field patterns and band structures were investigated for a range of filling factors (fraction of the surface that is etched) between 10% to 26%, and the far-fields contain emission bands that were not yet reported in PCSELs at longer wavelengths. Changing the filling factor affects the photonic crystal band structure and thereby the optical mode at the Γ-point that will reach threshold first. This feature enables us to intentionally select the lasing mode with the desired far-field pattern. By a proper choice of filling factor, the intensity in the angular emission bands is diminished, resulting in a far-field with a narrow beam divergence of <1°.
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