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1.
  • Arafin, S., et al. (author)
  • Comprehensive analysis of electrically-pumped GaSb-based VCSELs
  • 2011
  • In: Optics Express. - 1094-4087 .- 1094-4087. ; 19:18, s. 17267-17282
  • Journal article (peer-reviewed)abstract
    • This paper discusses several performance-related aspects of electrically-pumped GaSb-based buried tunnel junction VCSELs with an emission wavelength of 2.6 mu m based on theoretical and experimental results. These results allow a deeper insight into the internal device physics, such as radial diffusion of carriers, maximum continuous-wave operating temperature, diffraction loss, internal temperature, gain and loss parameters, internal quantum efficiency of the active region etc. These parameters can be taken into account while designing mid-infrared lasers which leads to an improved device performance. A simple thermal model of the devices based on the two-dimensional (2-D) finite element method using the material data from the literature is also presented. In addition, an application-based result utilizing these lasers for the measurement of absolute water vapor concentration by wavelength modulation spectroscopy (WMS) method are also described, hinting that devices are well-suited for the targeted sensing applications.
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2.
  • Arafin, S., et al. (author)
  • Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief
  • 2010
  • In: 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. - 9781424453689 ; , s. 61-62
  • Conference paper (peer-reviewed)abstract
    • Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm.
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