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Träfflista för sökning "WFRF:(Asl Soleimani E.) "

Search: WFRF:(Asl Soleimani E.)

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  • Ebrahimi, P., et al. (author)
  • Systematic Optimization of Boron Diffusion for Solar Cell Emitters
  • 2017
  • In: Journal of Electronic Materials. - : Springer. - 0361-5235 .- 1543-186X. ; 46:7, s. 4236-4241
  • Journal article (peer-reviewed)abstract
    • To achieve p-n junctions for n-type solar cells, we have studied BBr3 diffusion in an open tube furnace, varying parameters of the BBr3 diffusion process such as temperature, gas flows, and duration of individual process steps, i.e., predeposition and drive-in. Then, output parameters such as carrier lifetime, sheet resistance, and diffusion profile were measured and statistically analyzed to optimize the emitter characteristics. Statistical analysis (factorial design) was finally employed to systematically explore the effects of the set of input variables on the outputs. The effect of the interactions between inputs was also evaluated for each output, quantified using a two-level factorial method. Temperature and BBr3 flow were found to have the most significant effect on different outputs such as carrier lifetime, junction depth, sheet resistance, and final surface concentration.
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2.
  • Kermaniha, M., et al. (author)
  • Systematic optimization of phosphorous diffusion for solar cell application
  • 2016
  • In: Journal of materials science. Materials in electronics. - : Springer-Verlag New York. - 0957-4522 .- 1573-482X. ; 27:12, s. 13086-13092
  • Journal article (peer-reviewed)abstract
    • Fossil fuel storage is running low and scientists around the globe are involved in a big search for an optimized substitute. Photovoltaic is one of the most likely alternatives to solve this issue and replace the fossil fuels. Among all types of cells, silicon solar cells are the most economical ones to produce affordable energy. In this paper, a systematic study was done on the diffusion of phosphorous in multi-crystalline silicon during solar cell emitter formation. All parameters involved in the conversion of a multi-crystalline p-type silicon to a p-n junction were analyzed quantitatively. This systematic approach predicts the effect of inputs on the outputs which decreases the number of the trail runs. The analysis result indicate, that raising the diffusion temperature from 830 to 880 A degrees C decreases the sheet resistance by -100 Omega/sq, and increasing POCl3 flow from 300 to 500 SCCM has an effect of -21 Omega/sq.
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  • Result 1-2 of 2
Type of publication
journal article (2)
Type of content
peer-reviewed (2)
Author/Editor
Radamson, Henry H. (2)
Kolahdouz, M. (2)
Iraj, M. (2)
Aghababa, H. (2)
Asl-Soleimani, E. (2)
Ebrahimi, P (1)
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Ganjian, M. (1)
Kermaniha, M. (1)
Manavizadeh, N. (1)
Elahi, M. (1)
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University
Royal Institute of Technology (2)
Language
English (2)
Research subject (UKÄ/SCB)
Engineering and Technology (2)

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