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  • Markevich, V.P., et al. (author)
  • Electronic properties of vacancy-oxygen complexes in SiGe alloys
  • 2003
  • In: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 340, s. 790-4
  • Journal article (peer-reviewed)abstract
    • Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si1-xGex crystals (0
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Jones, R. (1)
Briddon, P. R. (1)
Öberg, Sven (1)
Peaker, A.R. (1)
Coutinho, J. (1)
Murin, L I (1)
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Markevich, V.P. (1)
Torres, V.J.B. (1)
Auret, F.D. (1)
Abrosimov, N.V. (1)
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University
Luleå University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2003 (1)

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