| 1. |
- Soderstrom, D., et al.
(author)
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Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe
- 2001
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In: Journal of Electronic Materials. - 0361-5235 .- 1543-186X. ; 30:8, s. 972-976
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Journal article (peer-reviewed)abstract
- Semi-insulating Fe and Ru codoped InP epitaxial layers grown by low-pressure hydride vapor phase epitaxy have been investigated. InP:Ru and InP:Fe,Ru layers were grown on p-InP:Zn and n-InP:S substrates, in order to study dopant diffusion and electrical characteristics. Dopant diffusion profiles of Ru, Fe and Zn were measured by secondary ion mass spectroscopy. A small but noteworthy diffusion front is observed when InP:Ru is adjacent to InP:Zn, but not when adjacent to n-InP. For InP:Fe codoped with Ru a pronounced interdiffusion of Fe and Zn is observed for Ru concentrations less than 2 X 10(17) cm(-3), but, for a higher Ru concentration the interdiffusion is clearly suppressed. Moreover, when InP is codoped with Fe and Ru, the small diffusion tail of Ru in InP:Zn vanishes. Unlike InP:Fe, resistivities above 1 X 10(8) Ohm cm are measured for both electron and hole-current injection in InP:Fe,Ru.
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| 2. |
- Soderstrom, D., et al.
(author)
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Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
- 2001
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In: Electrochemical and solid-state letters. - 1099-0062 .- 1944-8775. ; 4:6, s. G53-G55
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Journal article (peer-reviewed)abstract
- Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200 degreesC for samples doped with Ru in the range 1 x 10(17) to 5 X 10(17) cm(-3). In this doping range, the specific resistivity of n(+)/InP:Ru/n(+) structures accommodating electron injection is less than or equal to1 x 10(4) Ohm cm and that of p(+)/InP:Ru/p(+) structures accommodating hole injection is as high as 3 x 10(10) Ohm cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an n(-) layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively.
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| 3. |
- Soderstrom, D., et al.
(author)
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Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy
- 2001
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In: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 148:7, s. G375-G378
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Journal article (peer-reviewed)abstract
- Ruthenium-doped InP (InP:Ru) has been grown by low-pressure hydride vapor-phase epitaxy (LP-HVPE) using bis(eta (5)-2,4-dimethylpentadienyl)ruthenium(II) as precursor. Ruthenium concentrations in the range 2 x 10(15) to 2 x 10(18) cm(-3) have been achieved. The Ru incorporation has been studied in terms of incorporation flux, and it is shown that the growth rate limits: the incorporation rate. From current-voltage measurements on n-InP/InP:Ru/n-InP and p-InP/InP:Ru/p-InP structures, resistivities greater than 10(3) Omega cm and greater than 10(10) Omega cm have been obtained, respectively.
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| 4. |
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| 5. |
- Westbergh, Petter, 1981, et al.
(author)
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40 Gbit/s error-free operation of oxide-confined 850 nm VCSEL
- 2010
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In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 46:14, s. 1014-1015
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Journal article (peer-reviewed)abstract
- Error-free transmission is demonstrated at bit rates up to 40 Gbit/s in a back-to-back configuration and up to 35 Gbit/s over 100 m multimode fibre using a directly modulated oxide confined 850 nm vertical cavity surface emitting laser.
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| 6. |
- Westbergh, Petter, 1981, et al.
(author)
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850 nm VCSEL Operating Error-Free at 40 Gbit/s
- 2010
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In: Semiconductor Laser Conference (ISLC), 2010 22nd IEEE International. - 0899-9406. - 9781424456833 ; , s. 154 - 155
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Conference paper (peer-reviewed)abstract
- We report on speed enhancement of 850 nm oxide confined VCSELs by photon lifetime reduction and demonstrate a 23 GHz modulation bandwidth and error-free operation at 40 Gbit/s.
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