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- Andresen, SE, et al.
(author)
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Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
- 2003
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In: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 94:6, s. 3990-3994
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Journal article (peer-reviewed)abstract
- We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
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