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Search: WFRF:(Bland JAC)

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  • Andresen, SE, et al. (author)
  • Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
  • 2003
  • In: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 94:6, s. 3990-3994
  • Journal article (peer-reviewed)abstract
    • We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Sadowski, Janusz (1)
Andresen, SE (1)
Sorensen, BS (1)
Rasmussen, FB (1)
Lindelof, PE (1)
Guertler, CM (1)
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Bland, JAC (1)
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University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2003 (1)

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