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| 2. |
- Canestraro, Carla Daniele, et al.
(author)
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Polarization dependence of the optical response in SnO2 and the effects from heavily F doping
- 2009
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In: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:23, s. 6301-6304
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Journal article (peer-reviewed)abstract
- The optical properties of intrinsic SnO2 (TO) and fluorine doped (FTO) are characterized in terms of the dielectric function epsilon(h omega) = epsilon(1) (h omega) + i epsilon(2)(h omega) by electronic structure calculations. The intrinsic TO shows intriguing absorption characteristics in the 3.0-8.0 eV region: (i) the low energy region of the fundamental band gap (3.2 Gamma(+)(1) (valence-band maximum to conduction-band minimum) is symmetry forbidden, and the band-edge absorption is therefore extremely weak. (ii) In the higher energy region (3.9 Gamma(+)(1), transitions (from the second uppermost valence band) is strongly polarized perpendicular to the main c axis. (iii) Transitions with polarization axis parallel to c axis are generated from Gamma(-)(2) -> Gamma(+)(1) transitions (from the third uppermost valence bands), and dominates at high energies (5.1
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| 3. |
- Canestraro, Carla Daniele, et al.
(author)
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Strong inter-conduction-band absorption in heavily fluorine doped tin oxide
- 2008
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In: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 255:5, s. 1874-1879
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Journal article (peer-reviewed)abstract
- The optical, electrical and structural properties of thin. film tin oxide (TO), F-doped tin oxide (FTO; n(F) approximate to 6 x 10(20) cm (3)) and highly F-doped tin oxide (hFTO; n(F) approximate to 10 x 10(20) cm (3)), grown by spray pyrolysis technique, are studied by atomic force microscopy, Hall effect, X-ray. fluorescence and transmission/reflection measurements. The resistivity (rho = 32 x 10 (4) Omega cm for intrinsic tin oxide) shows intriguing characteristics when F concentration n(F) is increased (rho = 6 x 10 (4) Omega cm for FTO but 25 x 10 (4) Omega cm for hFTO) whereas the carrier concentration is almost constant at high F concentration (n(c) approximate to 6 x 10(20) cm (3) for FTO and hFTO). Thus, F seems to act both as a donor and a compensating acceptor in hFTO. The high carrier concentration has a strong effect on the optical band-edge absorption. Whereas intrinsic TO has room-temperature band-gap energy of E-g approximate to 3.2 eV with an onset to absorption at about 3.8 eV, the highly doped FTO and hFTO samples show relatively strong absorption at 2-3 eV. Theoretical analysis based on density functional calculations of FTO reveals that this is not a defect state within the band-gap region, but instead a consequence of a hybridization of the F donor states with the host conduction band in combination with a band. filling of the lowest conduction band by the free carriers. This allows photon-assisted inter-conduction band transitions of the free electrons to energetically higher and empty conduction bands, producing the below-gap absorption peak.
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| 4. |
- da Silva, A. Ferreira, et al.
(author)
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Growth, Electrical and Optical Properties of SnO2:F on ZnO, Si and Porous Si Structures
- 2009
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In: NANOTECH CONFERENCE & EXPO 2009, VOL 1, TECHNICAL PROCEEDINGS. - : CRC PRESS-TAYLOR & FRANCIS GROUP. - 9781439817827 ; , s. 352-
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Conference paper (peer-reviewed)abstract
- In this work we have analyzed the optical absorption of the ZnO and SnO2:F (FTO) films and applied them in porous silicon light-emitting diodes. The absorption and energy gap were calculated by employing the projector augmented wave method [1] within the local density approximation and with a modeled on-site self-interaction-like correction potential within the LDA+U-S/C [2]. Experiment and theory show a good agreement when the optical absorption and optical energy gap are considered. A layer of FTO is deposited by spray pyrolysis on top of porous Si (PSi) or ZnO/(PSi) in order to make the LEDs. The morphology and roughness of the films are analyzed by Atomic Force Microscopy before and after the FTO deposition. The electrical and optical properties are studied by characteristics curves J x V, and electroluminescence intensity versus bias.
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| 5. |
- Roman, L. S., et al.
(author)
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Optical band-edge absorption of oxide compound SnO2
- 2006
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In: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 252:15, s. 5361-5364
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Journal article (peer-reviewed)abstract
- Tin oxide (SnO2) is an important oxide for efficient dielectrics, catalysis, sensor devices, electrodes and transparent conducting coating oxide technologies. SnO2 thin film is widely used in glass applications due to its low infra-red heat emissivity. In this work, the SnO2 electronic band-edge structure and optical properties are studied employing a first-principle and fully relativistic full-potential linearized augmented plane wave (FPLAPW) method within the local density approximation (LDA). The optical band-edge absorption alpha(omega) of intrinsic SnO2 is investigated experimentally by transmission spectroscopy measurements and their roughness in the light of the atomic force microscopy (AFM) measurements. The sample films were prepared by spray pyrolysis deposition method onto glass substrate considering different thickness layers. We found for SnO2 qualitatively good agreement of the calculated optical band-gap energy as well as the optical absorption with the experimental results.
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