| 1. |
- Wu, Han-Chun, et al.
(author)
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Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene
- 2017
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In: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 8
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Journal article (peer-reviewed)abstract
- Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.
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| 2. |
- Murphy, Barry E., et al.
(author)
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Homolytic Cleavage of Molecular Oxygen by Manganese Porphyrins Supported on Ag(111)
- 2014
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In: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 8:5, s. 5190-5198
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Journal article (peer-reviewed)abstract
- Oxygen binding and cleavage are important for both molecular recognition and catalysis. Mn-based porphyrins in particular are used as catalysts for the epoxidation of alkenes, and in this study the homolytic cleavage of O-2 by a surface-supported monolayer of Mn porphyrins on Ag(111) is demonstrated by scanning tunneling microscopy, X-ray absorption, and X-ray photoemission. As deposited, {5,10,15,20-tetraphenylporphyrinato}Mn(III)CI(MnCITPP) adopts a saddle conformation with the average plane of its macrocyde parallel to the substrate and the axial CI ligand pointing upward, away from the substrate. The adsorption of MnCITPP on Ag(111) Is accompanied by a reduction of the Mn oxidation state from Mn(III) to Mn(II) due to charge transfer between the substrate and the molecule. Annealing the Mn(II)CITPP monolayer up to 510 K causes the chlorine ligands to desorb from the porphyrins while leaving the monolayer intact. The Mn(II)TPP is stabilized by the surface acting as an axial ligand for the metal center. Exposure of the Mn(11)TPP/Ag(111) system to molecular oxygen results in the dissociation of O-2 and forms pairs of Mn(111)OTPP molecules on the surface. Annealing at 445 K reduces the Mn(111)OTPP complex back to Mn(II)TPP/Ag(111). The activation energies for Cl and 0 removal were found to be 0.35 +/- 0.02 eV and 0.26 +/- 0.03 eV, respectively.
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| 3. |
- Wu, Han-Chun, et al.
(author)
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Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.
- 2015
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In: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 9:9, s. 8967-8975
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Journal article (peer-reviewed)abstract
- Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.
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| 4. |
- Chaika, Alexander N., et al.
(author)
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Continuous wafer-scale graphene on cubic-SiC(001)
- 2013
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In: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 6:8, s. 562-570
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Journal article (peer-reviewed)abstract
- The atomic and electronic structure of graphene synthesized on commercially available cubic-SiC(001)/Si(001) wafers have been studied by low energy electron microscopy (LEEM), scanning tunneling microscopy (STM), low energy electron diffraction (LEED), and angle resolved photoelectron spectroscopy (ARPES). LEEM and STM data prove the wafer-scale continuity and uniform thickness of the graphene overlayer on SiC(001). LEEM, STM and ARPES studies reveal that the graphene overlayer on SiC(001) consists of only a few monolayers with physical properties of quasi-freestanding graphene. Atomically resolved STM and micro-LEED data show that the top graphene layer consists of nanometersized domains with four different lattice orientations connected through the aOE (c) 110 >-directed boundaries. ARPES studies reveal the typical electron spectrum of graphene with the Dirac points close to the Fermi level. Thus, the use of technologically relevant SiC(001)/Si(001) wafers for graphene fabrication represents a realistic way of bridging the gap between the outstanding properties of graphene and their applications.
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| 5. |
- Chaika, Alexander N., et al.
(author)
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Rotated domain network in graphene on cubic-SiC(001)
- 2014
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:13
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Journal article (peer-reviewed)abstract
- The atomic structure of the cubic-SiC(001) surface during ultra-high vacuum graphene synthesis has been studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by +/- 13.5 degrees relative to the < 110 >-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2 x 2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2 x 2) surface and the graphene/SiC(001) rotated domain network and pave the way for optimizing large-area graphene synthesis on low-cost cubic-SiC(001)/Si(001) wafers.
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