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Search: WFRF:(Cherkaoui Karim)

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  • Engström, Olof, 1943, et al. (author)
  • Navigation aids in the search for future high-k dielectrics: physical and electrical trends
  • 2006
  • In: Proceeding of 7th European Workshop on Ultimate Integration of Silicon (ULIS 2006), p.115-118, April 20-21, Grenoble, France (2006).. ; , s. 115-118
  • Journal article (peer-reviewed)abstract
    • From experimental literature data on metal oxides combinedwith theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
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  • La Torraca, Paolo, et al. (author)
  • Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
  • 2023
  • In: 2023 IEEE International Integrated Reliability Workshop, IIRW 2023. - 2374-8036 .- 1930-8841. - 9798350327274
  • Conference paper (peer-reviewed)abstract
    • The effects of defects in In0.47Ga0.53As/Al2O3/Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al2O3 close to the In0.47Ga0.53As/Al2O3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects' properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.
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