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- Pinardi, Kuntjoro, 1968, et al.
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Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test
- 2004
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In: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 48:7, s. 1119-1126
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Journal article (peer-reviewed)abstract
- Electrothermal effects during the unclamped inductive switching (UIS) of silicon-on-insulator (SOI) high power vertical double diffused MOS (VDMOS) transistors have been studied by device simulation. In the UIS test all the energy stored in the inductor during the on state is dumped directly into the device when the device is turned off. This extreme condition during the UIS test will give ratings for the power device and gives a measure for the stability of the device in the breakdown regime. Electrothermal simulations of this device are evaluated under boundary conditions imposed by the UIS circuit. Simulations show that UIS involves a substantial risk of turning the parasitic bipolar transistor (BJT) on. Our measurements of the fabricated SOI VDMOSFET in the static region are in good agreement with the expected impact of the self-heating on the saturation behaviour. The experiments at ambient temperature of 100 °C show that the breakdown voltage decreases as the drain voltage increases. This indicates that the parasitic BJT has been turned on and causes an open-base bipolar transistor breakdown voltage. © 2004 Elsevier Ltd. All rights reserved.
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- Pinardi, Kuntjoro, 1968, et al.
(author)
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High-power SOI vertical DMOS transistors with lateral drain contacts: Process developments, characterization, and modeling
- 2004
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In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 51:5, s. 790-796
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Journal article (peer-reviewed)abstract
- Silicon-on-insulator (SOI) high-power vertical double-diffused MOS (VDMOS) transistors are demonstrated with a CMOS compatible fabrication process. A new backend trench formation process ensures a defect free device layer. Scanning electron microscope micrographs show that it is nearly free of defects. This has been achieved by moving the trench formation steps toward the end of the process. Our electrical measurements indicate that the transistors are fully functional. Electrothermal simulations show that unclamped inductive switching (UIS) test involves a substantial risk of turning the parasitic bipolar transistor (BJT) on. The UIS test is used to characterize the performance of power devices under unclamped inductive loading conditions. Extreme operating condition can be expected when all the energy stored in the inductor is released directly into device. Our measurements of the fabricated SOI VDMOSFET in the static region are in good agreement with the expected impact of the self-heating on the saturation behavior. The experiments at ambient temperature of 100°C show that the break down voltage decreases as the drain voltage increases. This indicates that a parasitic BJT has been turned on.
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