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Enumeration	Reference	Cover	Find
1.	Heyns, M, et al. (author) Scaling of high-k dielectrics towards sub-Inm EOT 2003 In: Proceedings of International Symposium on VLSI Technology, Systems, and Applications. ; , s. 247-250 Conference paper (peer-reviewed)
2.	Kaczer, B., et al. (author) Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's 2004 In: Annu Proc Reliab Phys Symp. ; , s. 79-83 Conference paper (peer-reviewed)abstract The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that i) the effect of voltage stress on gate oxide and ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.

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Author/Editor: Groeseneken, G. (2); Degraeve, R (2); Beck, S (1); Kaushik, V. (1); Zhao, C. (1); Chen, J. (1); show more...; Lin, S (1); Manabe, Y. (1); Young, E (1); GREEN, M (1); Carter, E (1); De Witte, H (1); Carter, R (1); Heyns, M (1); Richard, O. (1); Bender, H (1); Blomme, P (1); Boullart, W (1); Brijs, B (1); Caymax, M (1); Clues, M (1); Conard, T (1); De Gendt, S (1); Delabie, A (1); Deweerdt, W (1); Henson, K (1); Kauerauf, T (1); Kubicck, S (1); Lucci, L (1); Lujan, G (1); Mentens, J (1); Pantisano, L (1); Petry, J (1); Rohr, E (1); Schram, T (1); Vandervvorst, W (1); van Doome, P (1); van Eishocht, S (1); Wetslinder, Jörgen (1); Witters, T (1); Cosnier, V (1); Jang, S E (1); Kerber, A (1); Kluth, J (1); Tsai, W (1); Shimamoto, Y (1); Bajolet, P (1); Maes, J W (1); Date, L (1); Pique, D (1); show less...

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