| 1. |
- Aureli, Lorenzo, et al.
(author)
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Geography and environmental pressure are predictive of class-specific radioresistance in black fungi
- 2023
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In: Environmental Microbiology. - 1462-2920. ; 25:12, s. 2931-2942
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Journal article (peer-reviewed)abstract
- Black fungi are among the most resistant organisms to ionizing radiation on Earth. However, our current knowledge is based on studies on a few isolates, while the overall radioresistance limits across this microbial group and the relationship with local environmental conditions remain largely undetermined. To address this knowledge gap, we assessed the survival of 101 strains of black fungi isolated across a worldwide spatial distribution to gamma radiation doses up to 100 kGy. We found that intra and inter-specific taxonomy, UV radiation, and precipitation levels primarily influence the radioresistance in black fungi. Altogether, this study provides insights into the adaptive mechanisms of black fungi to extreme environments and highlights the role of local adaptation in shaping the survival capabilities of these extreme-tolerant organisms.
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| 2. |
- Metreveli, Alex, et al.
(author)
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In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junction Transistors
- 2023
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In: IEEE Transactions on Nuclear Science. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9499 .- 1558-1578. ; 70:12, s. 2597-2604
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Journal article (peer-reviewed)abstract
- Gamma irradiation effects have been investigated on 4H-silicon carbide (SiC) bipolar junction transistors (BJTs), where the devices were exposed under different biasing regimes such as saturation, cut-off, active, reverse, and zero bias. Since bipolar transistors can be affected by dose rate, three different dose rates were used during irradiation tests. Characterization was performed on the transistors, without irradiation but in situ to avoid delays between irradiation and characterization. The study explores the relationship between biasing conditions and their impact on radiation-induced degradation of SiC BJT transistors. From these experiments, it is clear that 4H-SiC bipolar transistors can withstand high gamma doses, in the worst case less than 22% degradation of the current gain was seen for doses of up to 2 Mrad(Si).
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