| 1. |
- Ahmed, Taha, et al.
(author)
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Preparation and characterisation of ZnO/Fe2O3 core–shell nanorods
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Other publication (other academic/artistic)abstract
- ZnO is a widely used semiconductor photocatalyst. However, the bandgap of ZnO is too large to utilise visible light or solar energy. Therefore, ZnO can couple with a narrow band gap semiconductor that is a visible-light-responsive photocatalyst. ZnO can help with charge seperation through attracting electrons or holes from the other semiconductor. In this work, ZnO nanorods were electrodeposited on FTO glass, and then coated with ultrathin layer of Fe2O3 via ALD.SEM, TEM, XPS, Raman and UV-Vis spectroscopies were used to characterise the prepared samples. Raman shows that ALD-coated Fe2O3 is hematite (α-Fe2O3). The prepared ZnO/Fe2O3 shows photocatalytic activity of EBT degradation under visible light illumination. The synthetic strategy can also beextended to prepare other heterostructured photocatalysts.
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| 2. |
- Ajalloueian, Fatemeh, et al.
(author)
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Emulsion Electrospinning as an Approach to Fabricate PLGA/Chitosan Nanofibers for Biomedical Applications
- 2014
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In: BioMed Research International. - : Hindawi Publishing Corporation. - 2314-6133 .- 2314-6141. ; :475280
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Journal article (peer-reviewed)abstract
- Novel nanofibers from blends of polylactic-co-glycolic acid (PLGA) and chitosan have been produced through an emulsion electrospinning process. The spinning solution employed polyvinyl alcohol (PVA) as the emulsifier. PVA was extracted from the electrospun nanofibers, resulting in a final scaffold consisting of a blend of PLGA and chitosan. The fraction of chitosan in the final electrospun mat was adjusted from 0 to 33%. Analyses by scanning and transmission electron microscopy show uniform nanofibers with homogenous distribution of PLGA and chitosan in their cross section. Infrared spectroscopy verifies that electrospun mats contain both PLGA and chitosan. Moreover, contact angle measurements show that the electrospun PLGA/chitosanmats are more hydrophilic than electrospun mats of pure PLGA. Tensile strengths of 4.94 MPa and 4.21 MPa for PLGA/chitosan in dry and wet conditions, respectively, illustrate that the polyblend mats of PLGA/chitosan are strong enough for many biomedical applications. Cell culture studies suggest that PLGA/chitosan nanofibers promote fibroblast attachment and proliferation compared to PLGA membranes. It can be assumed that the nanofibrous composite scaffold of PLGA/chitosan could be potentially used for skin tissue reconstruction.
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| 3. |
- Babucci, Melike, et al.
(author)
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Depth-Dependent Atomic-Scale Structural Changes in (Ag,Cu)(In,Ga)Se2 Absorbers Relevant for Thin-Film Solar Cells
- 2023
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In: ACS Applied Energy Materials. - : American Chemical Society (ACS). - 2574-0962. ; 6:18, s. 9264-9275
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Journal article (peer-reviewed)abstract
- Alloying a Cu(In,Ga)Se-2 (CIGS) solar cell absorber with silver to form (Ag,Cu)(In,Ga)Se-2 (ACIGS) is an effective route for improving the performance of CIGS-based thin-film solar cells by increasing the optical band gap and open-circuit voltage. While the role of Ag on the solar cell's performance and crystal structure has been analyzed, important gaps in our understanding remain, especially regarding the atomistic (short-range) structure. Previous X-ray absorption spectroscopy (XAS) results have shown that local atomic arrangements in Ag-free CIGS deviate from the long-range crystallographic structure deduced from X-ray diffraction (XRD). However, it is unclear how these structural deviations evolve with Ag alloying, particularly in the presence of Ga depth gradient. In this work, we employ angle-resolved XAS to probe the local environment of Se atoms within different depths of ACIGS absorbers with varying Ag content and Ga depth gradient. By complementing XAS results with X-ray diffraction measurements for long-range structures, glow discharge optical emission spectroscopy for elemental profiles, and scanning transmission electron microscopy for morphologies, changes in element-specific bond lengths, cell parameters, and anion displacement depending on compositions of Group [I] (Cu, Ag) and Group [III] (In, Ga) elements were mapped. The results suggest that the local atomic arrangement of the investigated ACIGS thin-film solar cell samples is depth-dependent and deviates from the long-range crystallographic structure. Possible reasons include tetragonal distortion or the presence of other phases or off-stoichiometry compounds. For the sample with the highest Ag content, increased bond lengths of Se-Group [I] atoms and Se-Ga are observed from the absorber bulk toward the near-absorber/buffer interface, whereas, in Ag-free CIGS, no significant changes are found. Results further indicate nonlinear anion displacement with Ag addition in the absorber bulk or with depth composition variation, which is likely to affect the electronic properties of solar cells. These findings offer a better understanding of the atomic-scale properties of ACIGS absorbers in actual thin-film solar cells containing in-depth composition variations.
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| 4. |
- Bilousov, Oleksandr V., et al.
(author)
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ALD of phase controlled tin monosulfide thin films
- 2017
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Conference paper (peer-reviewed)abstract
- Tin monosulfide (SnS) is a promising semiconductor material for low-cost conversion of solar energy, playing the role of absorber layer in photovoltaic devices. SnS is, due to its high optical damping, also an excellent semiconductor candidate for the realization of ultrathin (nanoscale thickness) plasmonic solar cells [1].Here, we present an important step to further control and understand SnS film properties produced using low temperature ALD with Sn(acac)2 and H2S as precursors. We show that the SnS film properties vary over a rather wide range depending on substrate temperature and reaction conditions, and that this is connected to the growth of cubic (π-SnS) and orthorhombic SnS phases. The optical properties of the two polymorphs differ significantly, as demonstrated by spectroscopic ellipsometry [2].1. C. Hägglund, G. Zeltzer, R. Ruiz, A. Wangperawong, K. E. Roelofs, S. F. Bent, ACS Photonics 3 (3) (2016) 456–463.2. O. V. Bilousov, Y. Ren, T. Törndahl, O. Donzel-Gargand , T. Ericson, C. Platzer-Björkman, M. Edoff, and C. Hägglund, ACS Chemistry of Materials 29 (7) (2017) 2969–2978.
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| 5. |
- Bilousov, Oleksandr V., et al.
(author)
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Atomic Layer Deposition of Cubic and Orthorhombic Phase Tin Monosulfide
- 2017
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In: Chemistry of Materials. - : AMER CHEMICAL SOC. - 0897-4756 .- 1520-5002. ; 29:7, s. 2969-2978
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Journal article (peer-reviewed)abstract
- Tin monosulfide (SnS) is a promising light-absorbing material with weak environmental constraints for application in thin film solar cells. In this paper, we present low-temperature atomic layer deposition (ALD) of high-purity SnS of both cubic and orthorhombic phases. Using tin(II) 2,4-pentanedionate [Sn(acac)(2)] and hydrogen sulfide (H2S) as precursors, controlled growth of the two polymorphs is achieved. Quartz crystal microbalance measurements are used to establish saturated conditions and show that the SnS ALD is self-limiting over temperatures from at least 80 to 160 degrees C. In this temperature window, a stable mass gain of 19 ng cm(-2) cycle(-1) is observed. The SnS thin film crystal structure and morphology undergo significant changes depending on the conditions. High-resolution transmission electron microscopy and X-ray diffraction demonstrate that fully saturated growth requires a large H2S dose and results in the cubic phase. Smaller H2S doses and higher temperatures favor the orthorhombic phase. The optical properties of the two polymorphs differ significantly, as demonstrated by spectroscopic ellipsometry. The orthorhombic phase displays a wide (0.3-0.4 eV) Urbach tail in the near-infrared region, ascribed to its nanoscale structural disorder and/or to sulfur vacancy-induced gap states. In contrast, the cubic phase is smooth and void-free and shows a well-defined, direct forbidden-type bandgap of 1.64 eV.
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| 6. |
- Comparotto, Corrado, et al.
(author)
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Synthesis of BaZrS3 Perovskite Thin Films at a Moderate Temperature on Conductive Substrates
- 2022
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In: ACS Applied Energy Materials. - : American Chemical Society (ACS). - 2574-0962. ; 5:5, s. 6335-6343
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Journal article (peer-reviewed)abstract
- Chalcogenide perovskites are being considered for various energy conversion applications, not least photovoltaics. BaZrS3 stands out for its highly stable, earth-abundant, and nontoxic nature. It exhibits a very strong light-matter interaction and an ideal band gap for a top subcell in a two-junction photovoltaic device. So far, thin-film synthesis-necessary for proper optoelectronic characterization as well as device integration-remains underdeveloped. Sputtering has been considered, among others, but the need for an annealing step of at least 900 degrees C has been a cause for concern: such a high temperature could lead to damaging the bottom layers of prospective tandem devices. Still, a solid-state fabrication route has already demonstrated that BaZrS3 can form at much lower temperatures if excess S is present. In this work, sputtered Ba-Zr precursors capped by SnS are sulfurized at under 600 degrees C for 20 min. Although some Sn is still present at the surface after sulfurization, the resulting crystalline quality is comparable to samples synthesized at much higher temperatures. The results are rationalized, and the effect of key process variables is examined. This study represents the first successful synthesis of BaZrS3 perovskite that is compatible with conductive substrates-an important step forward for device integration.
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| 7. |
- Cunha, Jose M., V, et al.
(author)
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Decoupling of Optical and Electrical Properties of Rear Contact CIGS Solar Cells
- 2019
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In: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 9:6, s. 1857-1862
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Journal article (peer-reviewed)abstract
- A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo rear contact; ii) improved interface qualitywithCIGS by adding a sputteredAl 2O 3 layer over the metallic layer; and, iii) optimal ohmic electrical contact ensured by rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.
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| 8. |
- Curado, M. A., et al.
(author)
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Front passivation of Cu(In,Ga)Se-2 solar cells using Al2O3 : Culprits and benefits
- 2020
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In: APPLIED MATERIALS TODAY. - : ELSEVIER. - 2352-9407. ; 21
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Journal article (peer-reviewed)abstract
- In the past years, the strategies used to break the Cu(In,Ga)Se-2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces. In this study, we evaluate the structural, morphological and optoelectronic impact of an Al2O3 layer as a potential front passivation layer on the CIGS properties, as well as an Al2O3 tunneling layer between CIGS and CdS. Morphological and structural analyses reveal that the use of Al2O3 alone is not detrimental to CIGS, although it does not resist to the CdS chemical bath deposition. The CIGS optoelectronic properties degrade when the CdS is deposited on top of Al2O3. Nonetheless, when Al2O3 is used alone, the optoelectronic measurements reveal a positive impact of this inclusion such as a very low concentration of interface defects while keeping the same CIGS recombination channels. Thus, we suggest that an Al2O3 front passivation layer can be successfully used with alternative buffer layers. Depth-resolved microscopic analysis of the CIGS interface with slow-muons strongly suggests for the first time that low-energy muon spin spectroscopy (LE-mu SR) is sensitive to both charge carrier separation and bulk recombination in complex semiconductors. The demonstration that Al2O3 has the potential to be used as a front passivation layer is of significant importance, considering that Al2O3 has been widely studied as rear interface passivation material. (C) 2020 Published by Elsevier Ltd.
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| 9. |
- Donzel-Gargand, Olivier, et al.
(author)
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Cu-depleted patches induced by presence of K during growth of CIGS absorbers
- 2017
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Conference paper (peer-reviewed)abstract
- The conversion efficiency of the CIGS thin film solar cells has rapidly increased since introduction of the heavier alkali-doping (K, Rb, Cs). While the exclusive introduction of Na in the CIGS films has led to efficiencies up to 20,4% 1, the latest K, Rb or Cs post deposition treatments (PDT) have increased the efficiency to 22,6% 2. The exact role of this heavy-alkali PDT is still under discussion but three explanations have been discussed in the literature. First, that the heavy alkali PDT facilitates CdCu substitution, that results in an enhanced absorber type inversion, moving the p-n junction further into the CIGS bulk 3. Second, that the main effect from heavy alkali PDT is due to the formation of a K-In-Se2 layer, that passivates defects at the CIGS surface, reducing interface recombination 4. And third, that the heavy alkali PDT induces a Cu depletion at the surface of the CIGS which, by increasing the local Fermi level, increases the band bending; thus creating a higher potential barrier for holes to recombine 5.
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| 10. |
- Donzel-Gargand, Olivier, et al.
(author)
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Deep surface Cu depletion induced by K in high-efficiency Cu(In,Ga)Se2 solar cell absorbers
- 2018
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In: Progress in Photovoltaics. - : Wiley. - 1062-7995 .- 1099-159X. ; 26:9, s. 730-739
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Journal article (peer-reviewed)abstract
- In this work, we used K‐rich glass substrates to provide potassium during the coevaporation of Cu(In,Ga)Se2 (CIGS) absorber layers. Subsequently, we applied a postdeposition treatment (PDT) using KF or RbF to some of the grown absorbers. It was found that the presence of K during the growth of the CIGS layer led to cell effi- ciencies beyond 17%, and the addition of a PDT pushed it beyond 18%. The major finding of this work is the observation of discontinuous 100‐ to 200‐nm‐deep Cu‐ depleted patches in the vicinity of the CdS buffer layer, correlated with the presence of K during the growth of the absorber layer. The PDT had no influence on the forma- tion of these patches. A second finding concerns the composition of the Cu‐depleted areas, where an anticorrelation between Cu and both In and K was measured using scanning transmission electron microscopy. Furthermore, a steeper Ga/(In+Ga) ratio gradient was measured for the absorbers grown with the presence of K, suggesting that K hinders the group III element interdiffusion. Finally, no Cd in‐diffusion to the CIGS layer could be detected. This indicates that if CdCu substitution occurs, either their concentration is below our instrumental detection limit or its presence is contained within the first 6 nm from the CdS/CIGS interface.
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