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- Andrearczyk, Tomasz, et al.
(author)
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Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy
- 2022
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In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 121:24
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Journal article (peer-reviewed)abstract
- Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The magnetization reversal, recorded through measurements of the anomalous Hall effect, appearing under assistance of a static magnetic field parallel to the current, is interpreted in terms of the spin-orbit torque mechanism. Our results demonstrate that an addition of a small fraction of heavy Bi atoms, substituting As atoms in the prototype DFS (Ga,Mn)As and increasing the strength of spin-orbit coupling in the DFS valence band, significantly enhances the efficiency of current-induced magnetization reversal thus reducing considerably the threshold current density necessary for the reversal. Our findings are of technological importance for applications to spin-orbit torque-driven nonvolatile memory and logic elements. Published under an exclusive license by AIP Publishing.
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2. |
- Wadge, Ashutosh S., et al.
(author)
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Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
- 2022
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In: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 0953-8984 .- 1361-648X. ; 34:12
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Journal article (peer-reviewed)abstract
- We have performed electron transport and angle-resolved photo-emission spectroscopy ( ARPES) measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ((2) over bar 01) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between magnetic field and the [(2) over bar 01] direction. The results indicate elliptical shape of the Fermi surface cross- sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ((2) over bar 01) surface and it was found that bulk states pockets at constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level (FL) is increased, which is due to a small n-doping of the samples. This shifts the FL closer to the Dirac point, allowing investigating the physics of the Dirac andWeyl points, making this compound a platform for the investigation of the Dirac andWeyl points in three-dimensional materials.
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