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- Carpten, JD, et al.
(author)
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HRPT2, encoding parafibromin, is mutated in hyperparathyroidism-jaw tumor syndrome
- 2002
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In: Nature Genetics. - : Springer Science and Business Media LLC. - 1546-1718 .- 1061-4036. ; 32:4, s. 676-680
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Journal article (peer-reviewed)abstract
- We report here the identification of a gene associated with the hyperparathyroidism-jaw tumor (HPT-JT) syndrome. A single locus associated with HPT-JT (HRPT2) was previously mapped to chromosomal region 1q25-q32. We refined this region to a critical interval of 12 cM by genotyping in 26 affected kindreds. Using a positional candidate approach, we identified thirteen different heterozygous, germline, inactivating mutations in a single gene in fourteen families with HPT-JT. The proposed role of HRPT2 as a tumor suppressor was supported by mutation screening in 48 parathyroid adenomas with cystic features, which identified three somatic inactivating mutations, all located in exon 1. None of these mutations were detected in normal controls, and all were predicted to cause deficient or impaired protein function. HRPT2 is a ubiquitously expressed, evolutionarily conserved gene encoding a predicted protein of 531 amino acids, for which we propose the name parafibromin. Our findings suggest that HRPT2 is a tumor-suppressor gene, the inactivation of which is directly involved in predisposition to HPT-JT and in development of some sporadic parathyroid tumors.
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- Danielsson, E, et al.
(author)
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Investigation of thermal properties in fabricated 4H-SiC high-power bipolar transistors
- 2002
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In: Materials Science Forum, Vols. 389-393. ; , s. 1337-1340
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Conference paper (peer-reviewed)abstract
- Silicon Carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximum current gain of approximately 10 times, and a breakdown voltage of up to 600 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 degreesC, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. Physical device simulations have been used to analyze the measured data. The thermal conductivity is fitted to model the measured self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
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- Koo, SM, et al.
(author)
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Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors
- 2002
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In: Materials Science Forum, Vols. 389-393. ; , s. 1235-1238
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Conference paper (peer-reviewed)abstract
- Two different structures of junction field-effect transistors in 4H-SiC, with and without trenching effect in the channel region, have been fabricated and characterized. The devices formed with metal mask show a trenching profile (>similar to0.2 mum) after dry etch in the channel groove region and exhibited static induction transistor (SIT)-like characteristics in the sub-threshold region of I-V curves as the channel thickness decreases. The devices without trenching effect have been processed by using a wet-etched oxide mask resulting in a sloped dry-etch profile (theta=similar to30degrees) in the channel, and consequently showed well-saturated drain characteristics for all the channel thicknesses. The conduction mechanisms in these JFETs are examined by the potential profiles from two dimensional numerical simulations.
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