| 1. |
- Bao, Jiming, et al.
(författare)
-
Nanowire-induced Wurtzite InAs Thin Film on Zinc-Blende InAs Substrate
- 2009
-
Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 21:36, s. 3654-3654
-
Tidskriftsartikel (refereegranskat)abstract
- InAs pyramids and platelets on a zinc-blende InAs substrate are found to exhibit a wurtzite crystal structure. induced by wurtzite InAs nanowires, wurtzite InAs thin film and its associated zinc-blende/wurtzite heterocrystalline heterostructures may open up new opportunities in band-gap engineering and related device applications.
|
|
| 2. |
- Björk, Mikael, et al.
(författare)
-
Tunable effective g factor in InAs nanowire quantum dots
- 2005
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 72:20
-
Tidskriftsartikel (refereegranskat)abstract
- We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown using chemical beam epitaxy. The values of the electron g factors of the first few electrons entering the dot are found to strongly depend on dot size. They range from close to the InAs bulk value in large dots vertical bar g(*)vertical bar=13 down to vertical bar g(*)vertical bar=2.3 for the smallest dots.
|
|
| 3. |
|
|
| 4. |
|
|
| 5. |
- Bleszynski-Jayich, Ania C., et al.
(författare)
-
Imaging a one-electron InAs quantum dot in an InAs/InP nanowire
- 2008
-
Ingår i: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 77:24
-
Tidskriftsartikel (refereegranskat)abstract
- Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics, and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an InAs/InP nanowire using the tip as a movable gate. Images of dot conductance vs tip position at T=4.2 K show concentric rings as electrons are added, starting with the first electron. The SPM can locate a dot along a nanowire and individually tune its charge, abilities that will be very useful for the control of coupled nanowire dots.
|
|
| 6. |
- Bordag, Michael, et al.
(författare)
-
Shear stress measurements on InAs nanowires by AFM manipulation
- 2007
-
Ingår i: Small. - Weinheim : Wiley-VCH Verlagsgesellschaft. - 1613-6810 .- 1613-6829. ; 3:8, s. 1398-1401
-
Tidskriftsartikel (refereegranskat)abstract
- On an upward curve? The curvature of an elastically deformed nanowire pinned to a flat surface contains information about the maximum static friction force, and hence the shear stress, between the nanowire and the surface. Here, InAs nanowires are bent in a controlled manner using the tip of an atomic force microscope (see image). The shear stress can be obtained from a simple analysis according to the standard theory of elasticity.
|
|
| 7. |
- Bryllert, Tomas, et al.
(författare)
-
Vertical high-mobility wrap-gated InAs nanowire transistor
- 2006
-
Ingår i: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:5, s. 323-325
-
Tidskriftsartikel (refereegranskat)abstract
- In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.
|
|
| 8. |
- Conache, Gabriela, et al.
(författare)
-
AFM-based manipulation of InAs nanowires
- 2008
-
Ingår i: Proceedings of the IVC-17 (17th International Vacuum Congress) [also] ICSS-13 (13th International Conference on Surface Science) [also] ICN+T-2007 (International Conference on Nanoscience and Technology). - Bristol : Institute of Physics (IOP). ; 100, s. 052051-052051
-
Konferensbidrag (refereegranskat)abstract
- A controlled method of manipulation of nanowires was found using the tip of an Atomic Force Microscope (AFM). Manipulation is done in the ‘Retrace Lift’ mode, where feedback is turned off for the reverse scan and the tip follows a nominal path. The effective manipulation force during the reverse scan can be changed by varying an offset in the height of the tip over the surface. Using this method, we have studied InAs nanowires on different substrates. We have also investigated interactions between wires and with gold features patterned onto the substrates.
|
|
| 9. |
- Conache, Gabriela, et al.
(författare)
-
Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
- 2010
-
Ingår i: Physical Review B Condensed Matter. - College Park, Md. : American Physical Society. - 0163-1829 .- 1095-3795. ; 82:3
-
Tidskriftsartikel (refereegranskat)abstract
- By studying how nanowires lying on a surface bend when pushed by an atomic force microscopy tip we are able to measure the friction between them and the substrate. Here, we show how the friction between InAs nanowires and an insulating silicon nitride layer varies when a dc voltage is applied to the tip during manipulation. The bias charges the capacitor formed by the wire and the grounded silicon back contact. Electrostatic forces increase the contact pressure and allow us to tune the friction between the wire and the silicon nitride surface. Using nanowires of about 40-70 nm diameter and a few microns in length we have applied biases in the range +12 to -12 V. A monotonic increase of the sliding friction with voltage was observed. This increase in friction with the normal force implies that the mesoscopic nanowire-surface system behaves like a macroscopic contact, despite the nanometer size of the contact in the direction of motion. The demonstrated bias-controlled friction has potential applications in MEMS/NEMS devices.
|
|
| 10. |
- Conache, Gabriela, et al.
(författare)
-
Comparative friction measurements of InAs nanowires on three substrates
- 2010
-
Ingår i: Journal of Applied Physics. - College Park, MD : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 108:9
-
Tidskriftsartikel (refereegranskat)abstract
- We have investigated friction between InAs nanowires and three different substrates: SiO2, fluorosilanized SiO2, and Si3N4. The nanowires were pushed laterally with the tip of an atomic force microscope and the friction force per unit length for both static and sliding friction was deduced from the equilibrium shape of the bent wires. On all three substrates, thick wires showed a difference between sliding and static friction of up to three orders of magnitude. Furthermore, all substrates display a transition to stick-slip motion for nanowires with a diameter of less than about 40 nm. Hydrophobic and hydrophilic substrates display similar friction behavior suggesting that a condensed water layer does not strongly influence our results. The patterns and trends in the friction data are similar for all three substrates, which indicates that they are more fundamental in character and not specific to a single substrate. ©2010 American Institute of Physics.
|
|
