| 1. |
- Hollestelle, Antoinette, et al.
(author)
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No clinical utility of KRAS variant rs61764370 for ovarian or breast cancer
- 2016
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In: Gynecologic Oncology. - : Elsevier BV. - 0090-8258 .- 1095-6859. ; 141:2, s. 386-401
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Journal article (peer-reviewed)abstract
- Objective Clinical genetic testing is commercially available for rs61764370, an inherited variant residing in a KRAS 3′ UTR microRNA binding site, based on suggested associations with increased ovarian and breast cancer risk as well as with survival time. However, prior studies, emphasizing particular subgroups, were relatively small. Therefore, we comprehensively evaluated ovarian and breast cancer risks as well as clinical outcome associated with rs61764370. Methods Centralized genotyping and analysis were performed for 140,012 women enrolled in the Ovarian Cancer Association Consortium (15,357 ovarian cancer patients; 30,816 controls), the Breast Cancer Association Consortium (33,530 breast cancer patients; 37,640 controls), and the Consortium of Modifiers of BRCA1 and BRCA2 (14,765 BRCA1 and 7904 BRCA2 mutation carriers). Results We found no association with risk of ovarian cancer (OR = 0.99, 95% CI 0.94-1.04, p = 0.74) or breast cancer (OR = 0.98, 95% CI 0.94-1.01, p = 0.19) and results were consistent among mutation carriers (BRCA1, ovarian cancer HR = 1.09, 95% CI 0.97-1.23, p = 0.14, breast cancer HR = 1.04, 95% CI 0.97-1.12, p = 0.27; BRCA2, ovarian cancer HR = 0.89, 95% CI 0.71-1.13, p = 0.34, breast cancer HR = 1.06, 95% CI 0.94-1.19, p = 0.35). Null results were also obtained for associations with overall survival following ovarian cancer (HR = 0.94, 95% CI 0.83-1.07, p = 0.38), breast cancer (HR = 0.96, 95% CI 0.87-1.06, p = 0.38), and all other previously-reported associations. Conclusions rs61764370 is not associated with risk of ovarian or breast cancer nor with clinical outcome for patients with these cancers. Therefore, genotyping this variant has no clinical utility related to the prediction or management of these cancers.
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| 2. |
- Balmer, Richard S., et al.
(author)
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Transport behavior of holes in boron delta-doped diamond structures
- 2013
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 113:3, s. 033702-
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Journal article (peer-reviewed)abstract
- Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device.
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| 3. |
- Kumar Kovi, Kiran, et al.
(author)
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Time-of-Flight Characterization of Single-crystalline CVD Diamond with Different Surface Passivation Layers
- 2011
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In: MRS Proceedings. - : Cambridge University Press. - 1946-4274 .- 0272-9172. ; 1282:mrsf10-1282-a09-01
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Journal article (peer-reviewed)abstract
- The electronic properties of diamond, e.g. a high band-gap and high carrier mobilities, together with material properties such as a very high thermal conductivity, chemical inertness and a high radiation resistance makes diamond a unique material for many extreme electronic applications out of reach for silicon devices. This includes, e.g. microwave power devices, power devices and high temperature electronics. It is important to have an effective passivation of the surface of such devices since the passivation determines the ability of the device to withstand high surface electric fields. In addition, the passivation is used to control the surface charge which can strongly influence the electric field in the bulk of the device. It is possible to measure sample parameters such as electron and hole drift mobilities, charge carrier lifetimes or saturation velocities using Time-of-flight (ToF) method. The ToF technique has also been adapted for probing the electric field distribution and the distribution of trapped charge. In this paper we present new data from lateral ToF studies of high-purity single crystalline diamond with different surface passivations. Silicon oxide and silicon nitride are used as passivation layers in the current study. The effect of the passivation on charge transport is studied, and the results of different passivation materials are compared experimentally.
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| 4. |
- Suntornwipat, Nattakarn, et al.
(author)
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A Valleytronic Diamond Transistor : Electrostatic Control of Valley Currents and Charge-State Manipulation of NV Centers
- 2021
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In: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 21:1, s. 868-874
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Journal article (peer-reviewed)abstract
- The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices requires all-electric control of long-lived valley-polarized states, without the use of strong external magnetic fields. Because of the extreme strength of the carbon–carbon bond, diamond possesses exceptionally stable valley states that provide a useful platform for valleytronic devices. Using ultrapure single-crystalline diamond, we demonstrate electrostatic control of valley currents in a dual-gate field-effect transistor, where the electrons are generated with a short ultraviolet pulse. The charge current and the valley current measured at the receiving electrodes are controlled separately by varying the gate voltages. We propose a model to interpret experimental data, based on drift-diffusion equations coupled through rate terms, with the rates computed by microscopic Monte Carlo simulations. As an application, we demonstrate valley-current charge-state modulation of nitrogen-vacancy centers.
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| 5. |
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| 6. |
- Suntornwipat, Nattakarn, et al.
(author)
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Observation of transferred-electron oscillations in diamond
- 2019
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In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 115
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Journal article (peer-reviewed)abstract
- The transferred-electron oscillator (TEO), or Gunn oscillator, is a device used in microwave applications, which utilizes the negative differential mobility (NDM) effect to generate continuous oscillations. Recently, NDM was observed in intrinsic single-crystalline chemical vapor deposition (SC-CVD) diamond. The occurrence was explained by the electron repopulation between its different conduction band valleys. This paper presents the results of constructing a diamond TEO based on the NDM effect. A series of experiments have been performed for varying voltages, temperatures, and resonator parameters on three SC-CVD diamond samples of different thicknesses. For the temperature range of 90–300 K, we observe transferred-electron oscillations in diamond.
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