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- Shao, Q. M., et al.
(author)
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Roadmap of Spin-Orbit Torques
- 2021
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In: Ieee Transactions on Magnetics. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9464 .- 1941-0069. ; 57:7
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Journal article (peer-reviewed)abstract
- Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins, and magnetization. More recently, interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this article, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, 2-D materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three- and two-terminal SOT-magnetoresistive random access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain-wall and skyrmion racetrack memories. This article aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
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2. |
- Dieny, B., et al.
(author)
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Opportunities and challenges for spintronics in the microelectronics industry
- 2020
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In: Nature Electronics. - : Springer Science and Business Media LLC. - 2520-1131. ; 3:8, s. 446-459
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Journal article (peer-reviewed)abstract
- This Review Article examines the potential of spintronics in four key areas of application -memories, sensors, microwave devices, and logic devices - and discusses the challenges that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms. Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry. However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required. Here, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry. We highlight and explore four key areas: magnetic memories, magnetic sensors, radio-frequency and microwave devices, and logic and non-Boolean devices. We also discuss the challenges-at both the device and the system level-that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.
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3. |
- Holte, Jan, et al.
(author)
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Construction of an evidence-based integrated morphology cleavage embryo score for implantation potential of embryos scored and transferred on day 2 after oocyte retrieval
- 2007
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In: Human Reproduction. - : Oxford University Press (OUP). - 0268-1161 .- 1460-2350. ; 22:2, s. 548-557
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Journal article (peer-reviewed)abstract
- BACKGROUND: Evidence-based morphological embryo scoring models for ranking of implantation potential are still scarce, and the need for a precise model increases when aiming for singleton pregnancies. METHODS: Prospectively, 2266 IVF/ICSI double-embryo, day 2 transfers were studied. The five variables scored in 3- to 5-step scales for the embryos transferred are blastomere number (BL), fragmentation, blastomere size variation ('equality', EQ), symmetry of the cleavage and mononuclearity in the blastomeres (NU). The scoring results of embryos with an individual traceability from scoring to implantation, i.e. treatments resulting in either no implantation (n = 1385) or twin implantation (n = 228), were studied for prognostic potential. RESULTS: Although all five variables correlated highly with implantation potential, only BL, NU and EQ remained independently significant after regression analysis. The equation thus derived formed the basis for a 10-point integrated morphology cleavage (IMC) embryo score. A table with the scoring point for each possible combination of the embryo variables is presented. The scoring model was statistically validated on the singleton pregnancy group (n = 653). CONCLUSIONS: We suggest that this IMC embryo scoring, incorporating cleavage stage and information on the variation in blastomere size and the number of mononucleated blastomeres, may optimize embryo ranking and selection for day 2 transfers.
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