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Search: WFRF:(González Castaño D.M.)

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1.
  • de Rojas, I., et al. (author)
  • Common variants in Alzheimer’s disease and risk stratification by polygenic risk scores
  • 2021
  • In: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 12:1
  • Journal article (peer-reviewed)abstract
    • Genetic discoveries of Alzheimer’s disease are the drivers of our understanding, and together with polygenetic risk stratification can contribute towards planning of feasible and efficient preventive and curative clinical trials. We first perform a large genetic association study by merging all available case-control datasets and by-proxy study results (discovery n = 409,435 and validation size n = 58,190). Here, we add six variants associated with Alzheimer’s disease risk (near APP, CHRNE, PRKD3/NDUFAF7, PLCG2 and two exonic variants in the SHARPIN gene). Assessment of the polygenic risk score and stratifying by APOE reveal a 4 to 5.5 years difference in median age at onset of Alzheimer’s disease patients in APOE ɛ4 carriers. Because of this study, the underlying mechanisms of APP can be studied to refine the amyloid cascade and the polygenic risk score provides a tool to select individuals at high risk of Alzheimer’s disease. © 2021, The Author(s).
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2.
  • Andreou, Charalambos, et al. (author)
  • A Subthreshold, Low-Power, RHBD Reference Circuit, for Earth Observation and Communication Satellites
  • 2015
  • In: Circuits and Systems (ISCAS), 2015 IEEE International Symposium on. - 9781479983919 ; , s. 2245-2248
  • Conference paper (peer-reviewed)abstract
    • A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4 mu W and exhibits a measured Temperature Drift of 15ppm/degrees C for a temperature range of 190 degrees C (-60 degrees C to 130 degrees C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external components such as compensating capacitors. The circuit is radiation hardened by design (RHBD), it was fabricated using TowerJazz Semiconductor's 0.18 mu m standard CMOS technology and occupies a silicon area of 0.039mm(2). The proposed voltage reference is suitable for high-precision and low-power space applications.
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