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1.
  • Svensson, B.G., et al. (author)
  • Ion implantation processing and related effects in SiC
  • 2006
  • In: Silicon Carbide and Related Materials 2005, Pts 1 and 2. - 9780878494255 ; , s. 781-786
  • Conference paper (peer-reviewed)abstract
    • A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p(+)-doped layers, and deactivation of N donors by ion-induced defects.
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2.
  • Achtziger, N, et al. (author)
  • Hydrogen passivation of silicon carbide by low-energy ion implantation
  • 1998
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 73, s. 945-947
  • Journal article (peer-reviewed)abstract
    • implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.
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