| 1. |
- Belotelov, V. I., et al.
(author)
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Magnetophotonic intensity effects in hybrid metal-dielectric structures
- 2014
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 89:4, s. 045118-
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Journal article (peer-reviewed)abstract
- The magneto-optical properties of a hybrid metal-dielectric structure consisting of a one-dimensional gold grating on top of a magnetic waveguide layer are studied experimentally and theoretically. It is demonstrated that a magnetic field applied in the longitudinal configuration (in the plane of the magnetic film and perpendicular to the slits in the gold grating) to the metal-dielectric structure modifies the field distribution of the optical modes and thus changes the mode excitation conditions. In the optical far field, this manifests in the alteration of the optical transmittance or reflectance when the structure becomes magnetized. This magneto-optical effect is shown to represent a novel class of effects related to the magnetic-field-induced modification of the Bloch modes of the periodic hybrid structure. That is why we define this effect as "longitudinal magnetophotonic intensity effect" (LMPIE). The LMPIE has two contributions, odd and even in magnetization. While the even LMPIE is maximal for the light polarized perpendicular to the grating slits (TM) and minimal for the orthogonal polarization (TE), the odd LMPIE takes maximum values at some intermediate polarization and vanishes for pure TM and TE polarizations. Two principal modes of the magnetic layer - TM and TE - acquire in the longitudinal magnetic field additional field components and thus turn into quasi-TM and quasi-TE modes, respectively. The largest LMPIE is observed for excitation of the antisymmetrical quasi-TE mode by TM-polarized light. The value of the LMPIE measured for the plasmonic structure with a magnetic film of Bi2Dy1Fe4Ga1O12 composition is about 1% for the even effect and 2% for the odd one. However, the plasmonic structure with a magnetic film with a higher concentration of bismuth (Bi2.97Er0.03Fe4Al0.5Ga0.5O12) gives significantly larger LMPIE: even LMPIE reaches 24% and odd LMPIE is 9%. Enhancement of the magneto-optical figure of merit (defined as the ratio of the specific Faraday angle of a magnetic film to its absorption coefficient) of the magnetic films potentially causes the even LMPIE to exceed 100% as is predicted by calculations. Thus, the nanostructured material described here may be considered as an ultrafast magnetophotonic light valve.
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| 2. |
- Belotelov, V. I., et al.
(author)
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Plasmon-mediated magneto-optical transparency
- 2013
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In: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 4, s. 2128-
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Journal article (peer-reviewed)abstract
- Magnetic field control of light is among the most intriguing methods for modulation of light intensity and polarization on sub-nanosecond timescales. The implementation in nanostructured hybrid materials provides a remarkable increase of magneto-optical effects. However, so far only the enhancement of already known effects has been demonstrated in such materials. Here we postulate a novel magneto-optical phenomenon that originates solely from suitably designed nanostructured metal-dielectric material, the so-called magneto-plasmonic crystal. In this material, an incident light excites coupled plasmonic oscillations and a waveguide mode. An in-plane magnetic field allows excitation of an orthogonally polarized waveguide mode that modifies optical spectrum of the magneto-plasmonic crystal and increases its transparency. The experimentally achieved light intensity modulation reaches 24%. As the effect can potentially exceed 100%, it may have great importance for applied nanophotonics. Further, the effect allows manipulating and exciting waveguide modes by a magnetic field and light of proper polarization.
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| 3. |
- Takahashi, M., et al.
(author)
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Oxygen annealing effect of photoelectron spectra in SrBi2Ta2O9 film
- 2002
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In: Japanese Journal of Applied Physics. - 0021-4922 .- 1347-4065. ; 41:11B, s. 6797-6802
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Journal article (peer-reviewed)abstract
- Photoelectron spectra have been studied to clarify O-2-annealing effects on the band diagram of the metal-SrBi2Ta2O9 (SBT) junction and ionization energy of SBT films deposited by the pulsed laser, deposition (PLD) method. Photoemission spectra obtained by ultraviolet light irradiation have a threshold of 5.90 eV for the as-deposited SBT film and 5.56 eV for the O-2-annealed one. This shift of the threshold indicates that the annealing treatment has increased the Fermi level by 0.34 eV. On the assumption of a 4.2 eV band gap and 3.5 eV electron affinity for the SBT, as-deposited SBT has been estimated to give a 0.60 eV lower barrier height for holes than that for electrons, which is possibly because of, insufficiently oxidized (Bi2O2)(2+) layers as indicated by X-ray photoelectron spectroscopy (XPS). After annealing in O-2, however, barrier height energies for holes and electrons become closer to each other. These results agree with our previous studies which have reported that the O-2-annealing suppressed the leakage current through SBT and improved the retention characteristics of the metal-ferroelectric-insulator-semiconductor structure.
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| 4. |
- Timopheev, A. A., et al.
(author)
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The influence of intergranular interaction on the magnetization of the ensemble of oriented Stoner-Wohlfarth nanoparticles
- 2009
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 105:8
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Journal article (peer-reviewed)abstract
- The influence of interparticle interaction on the processes of magnetization reversal is considered for an ensemble of oriented Stoner-Wohlfarth nanoparticles. This is done through a solution of a kinetic equation describing the relaxation of the total magnetization to its equilibrium value in an effective mean field which includes a term proportional to the instantaneous value of the magnetization. It is shown that the interparticle interaction influences the temperature dependence of a coercive field. Under certain conditions, the presence of the interparticle interaction can lead to the formation of the so-called superferromagnetic state with the correlated directions of the magnetic moments of the particles. If the system is unable to come to the equilibrium during the time interval necessary to perform measurements, some measured quantities become dependent on the measurement time. It is shown that the blocking temperature T-b and the temperature dependence of coercive field at T < T-b are strongly dependent on a measurement time. At T>T-b, however, the coercivity, if exists, does not depend on the measurement time. The data of magnetostatic measurements, carried out on the (CoFeB)(x)-(SiO2)(1-x) nanogranular films with the concentration of ferromagnetic particles slightly lower than a percolation threshold, are in compliance with the results of the calculations.
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| 5. |
- Popov, V., et al.
(author)
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Morphology of PZT-PMN films grown from airflow
- 2003
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In: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 54, s. 575-584
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Journal article (peer-reviewed)abstract
- Lead zirconate titanate-lead magnesium niobate (PZT-PMN) films with thicknesses in the range 5 to 200 mum were fabricated by deposition from airflow at room temperature. Precursor powders of PZT and PMN were mixed in a ball mill and entrained in an airflow generated by a commercial jet-mill ( Micron-Master 02-506 ). Films were grown at a rate of 1 mum/minute onto the Ni and tungsten carbide substrates exposed to the air-powder mixture. Unfired, poled PZT-PMN films provided an audio acoustic response and form translucent 20-30 mum thick layers. Full density of the air-flow deposited materials has been achieved at temperatures 450degreesC lower than that typical for ball milled bulk PZT-PMN ceramics. After sintering for 2 hours at 850degreesC PZT-PMN ceramics with relative density of 99.5%, epsilon similar to 2170, tan delta similar to 0.009 @1 kHz and acceptable piezoelectric properties was obtained. Films sintered 2 hours at 1000degreesC showed remnant polarization P-r = 26 muC/cm(2) , P-s = 36 muC/cm(2) @95 kV/cm, and 50 Hz ac electric breakdown field as high as 120-170 kV/cm. Unusual grain morphology governs improved sinterability and enhanced properties of ferroelectric ceramics. Optical and AFM micrographs revealed needle-like grains preferentially oriented parallel to the air-powder stream. As-deposited films were found to be very non-uniform across the thickness: glass-like and with tensile strain on the contact surface. This strain is released and film microcrystalline structure becomes uniform in annealed film.
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| 6. |
- Abadei, S., et al.
(author)
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DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies
- 2001
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:13, s. 1900-1902
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Journal article (peer-reviewed)abstract
- Dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Omega cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 mum. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices.
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| 7. |
- Blomqvist, Mats, et al.
(author)
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High-performance epitaxial Na0.5K0.5NbO3 thin films by magnetron sputtering
- 2002
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:2, s. 337-339
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Journal article (peer-reviewed)abstract
- Epitaxial Na0.5K0.5NbO3 (NKN) thin films have been grown on LaAlO3 substrates by rf magnetron sputtering of a stoichiometric, high-density, ceramic target. X-ray diffraction analysis showed c-axis oriented cube-on-cube growth. Micrometer size interdigital capacitor (IDC) structures were defined on the surface of the NKN film using photolithography. The electrical characterization at 1 MHz showed dissipation factor tan delta of 0.010, tunability 16.5% at 200 kV/cm and dielectric permittivity epsilon(r)=470. The frequency dispersion of epsilon(r) between 1 kHz and 1 MHz was 8.5% and the IDCs showed very good insulating properties with leakage current density on the order of 30 nA/cm(2) at 400 kV/cm. The polarization loop exhibits weak ferroelectric hysteresis with maximum polarization 23.5 muC/cm(2) at 600 kV/cm. These results are promising for tunable microwave devices based on rf sputtered NKN thin films.
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| 8. |
- Cho, C. R., et al.
(author)
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Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition
- 2000
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In: Integrated Ferroelectrics. - : Informa UK Limited. - 1058-4587 .- 1607-8489. ; 31:1-4, s. 35-45
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Journal article (peer-reviewed)abstract
- Highly c-axis oriented single phase Na0.5K0.5NbO3 (NKN) thin films have been deposited onto polycrystalline Pt80Ir20 substrates and SiO2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 muC/cm(2), dielectric constant epsilon similar to 520 and tan delta - 0.024 @ 100 kHz, to superparaelectric state with tan delta as low as 0.003 and epsilon = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% Variation in the temperature range 77-415 K. NKN films grown onto SiO2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan delta less than 0.01, and epsilon similar to 110 @ 1 MHz. C-V measure ments for Au/NKN(270nm)/SiO2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.
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| 9. |
- Cho, Coong-Rae, et al.
(author)
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Na0.5K0.5NbO3/SiO2/Si Thin Film Varactor
- 2000
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76, s. 1761-
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Journal article (peer-reviewed)abstract
- Perfectly c-axis oriented micrometer thickNa 0.5 K 0.5 NbO 3 (NKN) films have been prepared on a thermally grown ultrathinSiO 2 template layer onto a Si(001) wafer by the pulsed laser deposition technique. A x-ray diffraction θ–2θ scan reveals multiple-cell structuring of single phase NKN film along the polar axis, while filmsgrown onto amorphous ceramic (Corning) glass show a mixture of slightly c-axis oriented NKN and pyrochlore phases. This implies a small amount ofSiO 2 crystallites distributed in an amorphous matrix inherit Si(001) orientation and promotes highly oriented NKN film growth. NKN filmdielectric permittivityε ′ was found to vary from 114.0 to 107.2 in the frequency range 1 kHz–1 MHz, while the resistivity was on the order of2.6×10 10 Ω cm @ 20 kV/cm. The planar interdigital variable reactance device (varactor) based on theNKN/SiO 2 /Si thin film structure possesses a dissipation factor of 0.8% at 1 MHz and zero bias, electrical tunability of 3.1%, and nA order leakage current at 20 V bias at room temperature.
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| 10. |
- Cho, C. R., et al.
(author)
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Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
- 2002
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In: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 49, s. 21-30
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Journal article (peer-reviewed)abstract
- Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.
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