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1.	Heyns, M, et al. (author) Scaling of high-k dielectrics towards sub-Inm EOT 2003 In: Proceedings of International Symposium on VLSI Technology, Systems, and Applications. ; , s. 247-250 Conference paper (peer-reviewed)
2.	Westlinder, Jörgen, et al. (author) On the Thermal Stability of Atomic Layer Deposited (ALD) TiN as Gate Electrode in MOS Devices 2002 In: IEEE SISC, December. Conference paper (peer-reviewed)
3.	Chesneau, A., et al. (author) Teaching nanoscience across scientific and geographical borders-A European Master programme in nanoscience and nanotechnology 2008 In: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 100:Part 3 Conference paper (peer-reviewed)abstract Within the Erasmus Mundus Master (EMM) Programme, five European Universities (KU Leuven, Belgium, Chalmers University of Technology, Sweden, Delft University of Technology and Leiden University, the Netherlands, and the University of Dresden, Germany) have joined forces to offer a unique master programme in Nanoscience and Nanotechnology, EMM-nano, at the cutting edge of state-of-the-art research. The students design and build their individual area of specialisation within nanophysics, nanotechnology, biophysics, biotechnology through their choice of trajectory between the partners. We discuss some of the challenges related to the crossdisciplinary nature of the field, educational activities in cleanrooms, and issues related to the integration of teaching programmes across the borders within Europe.
4.	Kaczer, B., et al. (author) Impact of gate-oxide breakdown of varying hardness on narrow and wide nFET's 2004 In: Annu Proc Reliab Phys Symp. ; , s. 79-83 Conference paper (peer-reviewed)abstract The soft gate-oxide breakdown event is observed to have negligible impact on the intrinsic parameters of even a narrow nFET. However, during subsequent wear-out of the breakdown path a significant impact of gate-to-channel breakdowns on nFET characteristics is found. It is also shown that i) the effect of voltage stress on gate oxide and ii) apparent electrical effects have to be corrected for to properly understand the intrinsic nature of the breakdown.

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Type of publication: conference paper (4)

Type of content: peer-reviewed (4)

Author/Editor: Groeseneken, G. (4); Degraeve, R (2); Pantisano, L (2); Schram, T (2); Beck, S (1); Kaushik, V. (1); show more...; Zhao, C. (1); Chen, J. (1); Rudquist, Per, 1968 (1); Lin, S (1); Manabe, Y. (1); Young, E (1); GREEN, M (1); Carter, E (1); Wendin, Göran, 1942 (1); De Witte, H (1); Carter, R (1); Chesneau, A. (1); Heremans, P. (1); Rep, D. (1); Schwille, P. (1); Sluijter, B. (1); Heyns, M (1); Westlinder, Jörgen (1); Richard, O. (1); Bender, H (1); Blomme, P (1); Boullart, W (1); Brijs, B (1); Caymax, M (1); Clues, M (1); Conard, T (1); De Gendt, S (1); Delabie, A (1); Deweerdt, W (1); Henson, K (1); Kauerauf, T (1); Kubicck, S (1); Lucci, L (1); Lujan, G (1); Mentens, J (1); Petry, J (1); Rohr, E (1); Vandervvorst, W (1); van Doome, P (1); van Eishocht, S (1); Wetslinder, Jörgen (1); Witters, T (1); Cosnier, V (1); Jang, S E (1); show less...

University: Uppsala University (2); Royal Institute of Technology (1); Chalmers University of Technology (1)

Language: English (4)

Research subject (UKÄ/SCB): Engineering and Technology (3); Social Sciences (1)

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