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Träfflista för sökning "WFRF:(Guo Yuqiao) "

Search: WFRF:(Guo Yuqiao)

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1.
  • Feng, Feng, et al. (author)
  • Room-temperature large magnetic-dielectric coupling in new phase anatase VTiO4
  • 2013
  • In: Chemical Communications. - : Royal Society of Chemistry (RSC). - 1359-7345 .- 1364-548X. ; 49:89, s. 10462-10464
  • Journal article (peer-reviewed)abstract
    • The synthetic new-phase VTiO4, as a new solid solution structure of anatase type, brings a large magnetodielectric ratio (Delta epsilon/epsilon(0)) of 7.2% at 300 K, representing a new simple-oxide structural catalogue exhibiting a room-temperature large magnetic-dielectric effect.
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2.
  • Lin, Chenwen, et al. (author)
  • Hydrogen-Incorporated TiS2 Ultrathin Nanosheets with Ultrahigh Conductivity for Stamp-Transferrable Electrodes
  • 2013
  • In: Journal of the American Chemical Society. - : American Chemical Society (ACS). - 0002-7863 .- 1520-5126. ; 135:13, s. 5144-5151
  • Journal article (peer-reviewed)abstract
    • As a conceptually new class of two-dimensional (2D) materials, the ultrathin nanosheets as inorganic graphene analogues (IGAs) play an increasingly vital role in the new-generation electronics. However, the relatively low electrical conductivity of inorganic ultrathin nanosheets in current stage significantly hampered their conducting electrode applications in constructing nanodevices. We developed the unprecedentedly high electrical conductivity in inorganic ultrathin nanosheets. The hydric titanium disulfide (HTS) ultrathin nanosheets, as a new IGAs, exhibit the exclusively high electrical conductivity of 6.76 x 10(4) S/m at room temperature, which is superior to indium tin oxide (1.9 x 10(4) S/m), recording the best value in the solution assembled 2D thin films of both graphene (5.5 x 10(4) S/m) and inorganic graphene analogues (5.0 x 10(2) S/m). The modified hydrogen on S-Ti-S layers contributes additional electrons to the TiS2 layered frameworks, rendering the controllable electrical conductivity as well as the electron concentrations. Together with synergic advantages of the excellent mechanical flexibility, high stability, and stamp-transferrable properties, the HTS thin films show promising capability for being the next generation conducting electrode material in the nanodevice fields.
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