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- Ederth, J., Johnsson, P., Niklasson, G.A., Hoel, A., Hultåker, A., Heszler, P., Granqvist, C.G., van Doorn, A.R., Jongerius, M.J., Burgard, D.
(author)
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Electrical and optical properties of thin films consisting of tin-doped indium oxide nanoparticles
- 2003
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In: Physical Review B (Condensed Matter and Materials Physics) 68, 155410, (1-10) (2003)..
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Journal article (peer-reviewed)
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- Heszler, P, et al.
(author)
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Photodissociation dynamics of gas-phase C-60 probed by optical emission spectroscopy
- 1996
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In: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. ; 53:19, s. 12541-12544
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Journal article (other academic/artistic)abstract
- Fragmentation of gas-phase C-60 after 193 nm laser excitation at 300 mJ/cm(2) fluence is probed by optical emission spectroscopy. Atomic C emission at 247.85 nm, and Mulliken, Deslandres-D'Azambuja, and Swan bands from C-2 species are observed. Time-resol
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- Heszler, P, et al.
(author)
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Photon emission from gas phase fullerenes excited by 193 nm laser radiation
- 1997
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In: JOURNAL OF CHEMICAL PHYSICS. - : AMER INST PHYSICS. - 0021-9606. ; 107:24, s. 10440-10445
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Journal article (other academic/artistic)abstract
- Continuous, black-body-type light emission is observed upon irradiation of gas phase C-60 and C-70 by 193 nm ArF excimer laser at fluences from 3 to 80 mJ/cm(2) in Ar and He ambient. Cluster temperatures are estimated by calibrating the detection system a
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- Ederth, J., Niklasson, G.A., Hultåker, A.,. Heszler P., Granqvist, C.G., van Doorn, A., Jongerius, M.J. and Burgard, D. Characterization of Porous Indium Tin Oxide Thin Films using Effective Medium Theory, J. Appl. Phys. 93, 984-988 (2003).
(author)
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Characterization of Porous Indium Tin Oxide Thin Films using Effective Medium Theory
- 2003
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In: J. Appl. Phys. 93, 984-988 (2003)..
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Journal article (peer-reviewed)
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- Farkas, B., et al.
(author)
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Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide
- 2018
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In: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 433, s. 149-154
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Journal article (peer-reviewed)abstract
- N-doped TiO2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 °C substrate temperature in reactive atmospheres of N2/O2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. The optical band gap values decreased with increasing N concentration in the films, while a monotonically increasing tendency and a maximum can be observed in case of extinction coefficient and refractive index, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the higher dopant concentration inhibits the crystallization of the samples.
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