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- Williamson, Alice, et al.
(author)
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Genome-wide association study and functional characterization identifies candidate genes for insulin-stimulated glucose uptake
- 2023
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In: Nature Genetics. - : Springer Nature. - 1061-4036 .- 1546-1718. ; 55:6, s. 973-983
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Journal article (peer-reviewed)abstract
- Distinct tissue-specific mechanisms mediate insulin action in fasting and postprandial states. Previous genetic studies have largely focused on insulin resistance in the fasting state, where hepatic insulin action dominates. Here we studied genetic variants influencing insulin levels measured 2 h after a glucose challenge in >55,000 participants from three ancestry groups. We identified ten new loci (P < 5 × 10-8) not previously associated with postchallenge insulin resistance, eight of which were shown to share their genetic architecture with type 2 diabetes in colocalization analyses. We investigated candidate genes at a subset of associated loci in cultured cells and identified nine candidate genes newly implicated in the expression or trafficking of GLUT4, the key glucose transporter in postprandial glucose uptake in muscle and fat. By focusing on postprandial insulin resistance, we highlighted the mechanisms of action at type 2 diabetes loci that are not adequately captured by studies of fasting glycemic traits.
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- Wulaningsih, W., et al.
(author)
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A competing risks analysis of the association between prediagnostic serum glucose and lipids and breast cancer survival
- 2016
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In: Cancer Research. - Kings Coll London, Div Canc Studies, Canc Epidemiol Grp, London WC2R 2LS, England. Kings Coll London, Inst Math & Mol Biomed, London WC2R 2LS, England. Uppsala Univ, Uppsala, Sweden. Reg Canc Ctr, Uppsala, Sweden. Karolinska Inst, Inst Environm Med, S-10401 Stockholm, Sweden. Karolinska Inst, S-10401 Stockholm, Sweden. AstraZeneca R&D, Mlndal, Switzerland. CALAB Res, Madrid, Spain.. - 0008-5472 .- 1538-7445. ; 76
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Journal article (other academic/artistic)
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- GOTHELID, M, et al.
(author)
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GEOMETRY OF THE GE(111)-AU(ROOT-3X-ROOT-3)R 30-DEGREES RECONSTRUCTION
- 1994
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In: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 50:7, s. 4470-4475
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Journal article (peer-reviewed)abstract
- A structure model for the Ge(111)-Au(root 3X root 3)R30 degrees surface reconstruction is proposed based on scanning tunneling microscopy (STM) and photoelectron spectroscopy on the Ge 3d and Au 4f core lines. The basic unit is a Au3Ge molecule binding in one-third of the T-1 substrate sites with a gold trimer pointing out of the surface. This leaves two-thirds of a monolayer of unoccupied T-1 sites which make up a hexagonal honeycomb pattern. Two types of STM images have been obtained which are explained within this model, where either the trimers or the substrate Ge atoms are probed depending on the specific tip conditions in combination with the sample bias voltage. Furthermore, small insets of a metallic (1X1) structure are found at low gold coverage together with a distorted (2X2) surface structure.
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- Göthelid, M., et al.
(author)
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Adatom and rest-atom contributions in Ge(111)c(2×8) and Ge(111)-Sn(7×7) core-level spectra
- 1993
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In: Physical Review B. - 0163-1829. ; 48:3, s. 2012-2015
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Journal article (peer-reviewed)abstract
- We have identified the adatom contribution in the Ge 3d core-level spectra from the clean Ge(111)c(2×8) surface, shifted 0.17 eV to higher binding energy compared to the bulk. This adatom component vanishes in the Ge(111)-Sn(7×7) surface core-level spectra where Sn occupies the adatom site. Moreover we report the observation of an earlier proposed difference between the rest atoms in the c(2×8) structure, and also a shift to lower binding energy for the rest atoms in both structures studied. © 1993 The American Physical Society.
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- Hammar, M., et al.
(author)
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In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si(001)/Ge
- 1996
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In: Surface Science. - : Elsevier BV. - 0039-6028. ; 349:2, s. 129-144
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Journal article (peer-reviewed)abstract
- We use ultrahigh vacuum transmission electron microscopy (UHV-TEM) to study the growth of Ge on Si(001) in real time at different temperatures and for coverages ranging from the initial monolayers to the development and relaxation of 3D islands. During growth of the first monolayers the surface gradually changes from a disordered missing-dimer structure to a rather well ordered (2 × 8) reconstruction, an evolution clearly resolved by the TEM. As the coverage is increased 3D islands starts to form. The growth and relaxation of these islands are shown to depend significantly on the temperature, e.g. with different dislocations formed at high and low temperatures. We interpret this difference in terms of the brittle-ductile transition in Ge, below which dislocation glide is frozen out. An interesting observation is that islands grown at low temperatures are more fully relaxed than those grown at higher temperatures. At high enough temperature the islands are initially, up to a specific size, coherent with the substrate and further growth occurs in a remarkably oscillatory fashion with the introduction of each (60°-type) dislocation, where the core of the island, of about 2000 Å in diameter, remains fully strained. However, in the low-temperature regime the islands grow relaxed from the outset with pure edge dislocations continuously being introduced in the moving edges. For temperatures less than 600̊C the transition from 2D to 3D growth occurs via the formation of small and strained 3D islands, so-called "hut clusters". We monitor the nucleation and characteristics of these clusters and discuss their possible role in the formation of relaxed 3D islands. The different growth mechanisms are discussed in terms of a simple model for the energetics of strain-relaxed islands, leading to a qualitative description of the temperature-dependent growth modes.
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- Le Lay, G., et al.
(author)
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STM and synchrotron radiation studies of "prototypical" metal{plus 45 degree rule}semiconductor systems
- 1994
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In: Surface Science. - 0039-6028. ; 307-309:PART A, s. 280-294
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Journal article (peer-reviewed)abstract
- Since the origin of surface science noble metal{plus 45 degree rule}elemental semiconductor couples have been considered as "prototypical" systems. After three decades of research their structural and electronic properties remain an intriguing maze despite recent advances made, especially thanks to the development of the near-field microscopies and the extensive use of synchrotron radiation in surface crystallography and in high-resolution photoelectron spectroscopy. In the last few years, lead, as a replacement inert metal, has nearly gained the pole position in the display of exotic behaviour. This paper gives a flavour of this mystery story and highlights some puzzling questions. © 1994.
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