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  • Hermannsson, P.G., et al. (author)
  • Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface
  • 2013
  • In: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 740-742, s. 749-752
  • Conference paper (peer-reviewed)abstract
    • We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Allerstam, Fredrik, ... (1)
Hermannsson, P.G. (1)
Hauksson, S. (1)
Sveinbjornsson, E. O ... (1)
University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2013 (1)

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