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- Grubb, Anders, et al.
(author)
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Generation of a new cystatin C-based estimating equation for glomerular filtration rate by use of 7 assays standardized to the international calibrator
- 2014
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In: Clinical Chemistry. - : Oxford University Press (OUP). - 0009-9147 .- 1530-8561. ; 60:7, s. 974-986
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Journal article (peer-reviewed)abstract
- BACKGROUND:Many different cystatin C-based equations exist for estimating glomerular filtration rate. Major reasons for this are the previous lack of an international cystatin C calibrator and the nonequivalence of results from different cystatin C assays.METHODS:Use of the recently introduced certified reference material, ERM-DA471/IFCC, and further work to achieve high agreement and equivalence of 7 commercially available cystatin C assays allowed a substantial decrease of the CV of the assays, as defined by their performance in an external quality assessment for clinical laboratory investigations. By use of 2 of these assays and a population of 4690 subjects, with large subpopulations of children and Asian and Caucasian adults, with their GFR determined by either renal or plasma inulin clearance or plasma iohexol clearance, we attempted to produce a virtually assay-independent simple cystatin C-based equation for estimation of GFR.RESULTS:We developed a simple cystatin C-based equation for estimation of GFR comprising only 2 variables, cystatin C concentration and age. No terms for race and sex are required for optimal diagnostic performance. The equation, [Formula: see text] is also biologically oriented, with 1 term for the theoretical renal clearance of small molecules and 1 constant for extrarenal clearance of cystatin C.CONCLUSIONS:A virtually assay-independent simple cystatin C-based and biologically oriented equation for estimation of GFR, without terms for sex and race, was produced.
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| 4. |
- Bi, Zhaoxia, et al.
(author)
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Self-assembled InN quantum dots on side facets of GaN nanowires
- 2018
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 123:16
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Journal article (peer-reviewed)abstract
- Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (...ABABCBC...) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.
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| 5. |
- Gunningberg, Per, et al.
(author)
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WISENET Wireless Sensor Networks VINN Excellence Center
- 2007
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Other publication (other academic/artistic)abstract
- This broschure was produced for the inauguration of WISENET December 7, 2007. It decribes the future impact of WISENET, application areas and the 10 partners. The three research areas "Node Integration & Energy", "Networkning & Security" and "Wireless Communication" is briefly described as well as the application projects in "Water Sensing" and "Transport".
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| 6. |
- Razpet, A., et al.
(author)
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Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography
- 2005
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In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 97:4
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Journal article (peer-reviewed)abstract
- Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 mum and pore diameters of 30 and 70 nm were attached to thermally grown SiO2 covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backscattered He+ ions with the initial energy of 2 MeV. The ordered pattern of the porous alumina films was successfully transferred into SiO2 after irradiation with a 4 MeV Cl2+ beam at fluence of 10(14) ions/cm(2), followed by chemical etching in a 5% HF solution.
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| 8. |
- Razpet, A., et al.
(author)
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Ion transmission and characterization of ordered nanoporous alumina
- 2004
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In: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; B:222, s. 593-600
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Journal article (peer-reviewed)abstract
- Ordered nanoporous alumina samples with a pore diameter of 70 nm, an array period of 100 nm and several thicknesses were considered as possible masks for pattern transfer by MeV ion lithography. A simple procedure for the sample alignment using a 2 MeV He+ beam was utilized. The energy distributions of transmitted ions as well as backscattering spectra were studied in aligned and non-aligned orientations. The best transmission, comparable to the relative surface area covered by pores, was reached for 2 mum thick samples and was independent on ion species. Although the transmission for thicker membranes was generally lower, it significantly depended on the quality of each individual sample. The presented ion beam technique can therefore be used as a tool for the characterization of porous materials. The acceptance angle for transmission through pores and the effective atomic density of samples can be obtained from the experimental data and it is shown that nanoporous alumina can be used as a mask for MeV ion lithography.
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