| 1. |
- Amloy, Supaluck, et al.
(författare)
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Dynamic characteristics of the exciton and the biexciton in a single InGaN quantum dot
- 2012
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Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 101:6
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Tidskriftsartikel (refereegranskat)abstract
- The dynamics of the exciton and the biexciton related emission from a single InGaN quantum dot (QD) have been measured by time-resolved microphotoluminescence spectroscopy. An exciton-biexciton pair of the same QD was identified by the combination of power dependence and polarization-resolved spectroscopy. Moreover, the spectral temperature evolution was utilized in order to distinguish the biexciton from a trion. Both the exciton and the biexciton related emission reveal mono-exponential decays corresponding to time constants of similar to 900 and similar to 500 ps, respectively. The obtained lifetime ratio of similar to 1.8 indicates that the QD is small, with a size comparable to the exciton Bohr radius.
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| 2. |
- Amloy, Supaluck, et al.
(författare)
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Excitons and biexcitons in InGaN quantum dot like localization centers
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross section transmission electron microscopy reveals varying shapes and lateral sizes in the range ~1-5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to -22 meV, in correlation with the exciton emission energy. Negative binding energies justify the three-dimensional quantum confinement, which confirms QD-like properties of the localization centers.! The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ~3 nm for a QD with strongly negative Ebxx = -15.5 meV.
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| 3. |
- Amloy, Supaluck, et al.
(författare)
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Excitons and biexcitons in InGaN quantum dot like localization centers
- 2014
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 25:49, s. 495702-
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Tidskriftsartikel (refereegranskat)abstract
- Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1–5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (Ebxx) was found to vary from center to center, between 3 to −22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of Ebxx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and Ebxx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative Ebxx = −15.5 meV.
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| 4. |
- Amloy, Supaluck, et al.
(författare)
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Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons
- 2011
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Ingår i: PHYSICAL REVIEW B. - : American Physical Society. - 1098-0121. ; 83:20, s. 201307-
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Tidskriftsartikel (refereegranskat)abstract
- The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits mutually orthogonal fine-structure components split by 100-340 mu eV, as measured from the cleaved edge of the sample. The exciton and the biexciton reveal identical magnitudes but reversed sign of the energy splitting.
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| 5. |
- Clark, Andrew G., et al.
(författare)
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Evolution of genes and genomes on the Drosophila phylogeny
- 2007
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Ingår i: Nature. - : Springer Science and Business Media LLC. - 0028-0836 .- 1476-4687. ; 450:7167, s. 203-218
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Tidskriftsartikel (refereegranskat)abstract
- Comparative analysis of multiple genomes in a phylogenetic framework dramatically improves the precision and sensitivity of evolutionary inference, producing more robust results than single-genome analyses can provide. The genomes of 12 Drosophila species, ten of which are presented here for the first time (sechellia, simulans, yakuba, erecta, ananassae, persimilis, willistoni, mojavensis, virilis and grimshawi), illustrate how rates and patterns of sequence divergence across taxa can illuminate evolutionary processes on a genomic scale. These genome sequences augment the formidable genetic tools that have made Drosophila melanogaster a pre-eminent model for animal genetics, and will further catalyse fundamental research on mechanisms of development, cell biology, genetics, disease, neurobiology, behaviour, physiology and evolution. Despite remarkable similarities among these Drosophila species, we identified many putatively non-neutral changes in protein-coding genes, non-coding RNA genes, and cis-regulatory regions. These may prove to underlie differences in the ecology and behaviour of these diverse species.
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| 6. |
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| 7. |
- Darakchieva, Vanya, et al.
(författare)
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Structural anisotropy of nonpolar and semipolar InN epitaxial layers
- 2010
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Ingår i: JOURNAL OF APPLIED PHYSICS. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 108:7, s. 073529-
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Tidskriftsartikel (refereegranskat)abstract
- We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) gamma-LiAlO2, respectively, and semipolar (10 (1) over bar1) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111) A and InN(111) B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.
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| 8. |
- Darakchieva, Vanya, et al.
(författare)
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Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
- 2011
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 110:6, s. 063535-
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Tidskriftsartikel (refereegranskat)abstract
- We have studied hydrogen impurities and related structural properties in state-of-the-art wurtzite InN films with polar, nonpolar, and semipolar surface orientations. The effects of thermal annealing and chemical treatment on the incorporation and stability of H are also discussed. The near-surface and bulk hydrogen concentrations in the as-grown films increase when changing the surface orientation from (0001) to (000 (1) over bar) to (1 (1) over bar 01) and to (11 (2) over bar0), which may be associated with a decrease in the grain size and change of the growth mode from 2D to 3D. Thermal annealing at 350 degrees C in N(2) leads to a reduction of H concentrations and the intrinsic levels of bulk H are found to correlate with the structural quality and defects in the annealed films.
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| 9. |
- Darakchieva, Vanya, et al.
(författare)
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Unravelling the free electron behavior in InN
- 2008
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Ingår i: Optoelectronic and Microelectronic Materials and Devices, 2008. - : IEEE. - 9781424427161 ; , s. 90-97
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Konferensbidrag (refereegranskat)abstract
- Precise measurement of the optical Hall effect in InN using magneto-optical generalized ellipsometry at IR and THz wavelengths, allows us to decouple the surface accumulation and bulk electron densities in InN films by non-contact optical means and further to precisely measure the effective mass and mobilities for polarizations parallel and perpendicular to the optical axis. Studies of InN films with different thicknesses, free electron densities and surface orientations enable an intricate picture of InN free electron properties to emerge. Striking findings on the scaling factors of the bulk electron densities with film thickness further supported by transmission electron microscopy point to an additional thickness dependent doping mechanism unrelated to dislocations. Surface electron accumulation is observed to occur not only at polar but also at non-polar and semi-polar wurtzite InN, and zinc blende InN surfaces. The persistent surface electron density shows a complex behavior with bulk density and surface orientation. This behavior might be exploited for tuning the surface charge in InN.
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| 10. |
- Hsiao, C.L., et al.
(författare)
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High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment
- 2008
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 92:11
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Tidskriftsartikel (refereegranskat)abstract
- High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors. © 2008 American Institute of Physics.
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