| 1. |
- Adell, Johan, 1980, et al.
(author)
-
Electron spectroscopic studies of nanowires formed by (GaMn)As growth on GaAs(111)B
- 2011
-
In: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 151:11, s. 850-854
-
Journal article (peer-reviewed)abstract
- Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such that the resonant photoemission eventually dominates over the Auger decay channel. The change is ascribed to dilution of Mn, showing that Mn is transferred from the MnAs particles into the nanowires. (C) 2011 Elsevier Ltd. All rights reserved.
|
|
| 2. |
- Adell, Johan, et al.
(author)
-
Formation of epitaxial MnBi layers on (Ga,Mn)As
- 2009
-
In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121 .- 2469-9950 .- 2469-9969. ; 80:7
-
Journal article (peer-reviewed)abstract
- The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
|
|
| 3. |
- Adell, Johan, 1980, et al.
(author)
-
Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn)As
- 2011
-
In: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 0953-8984 .- 1361-648X. ; 23:8
-
Journal article (peer-reviewed)abstract
- Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn)As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn)As/GaAs interface.
|
|
| 4. |
|
|
| 5. |
|
|
| 6. |
|
|
| 7. |
|
|
| 8. |
- Adell, Martin, et al.
(author)
-
Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
- 2005
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86, s. 112501-
-
Journal article (peer-reviewed)abstract
- In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.
|
|
| 9. |
|
|
| 10. |
- Andreasson, Måns, 1975, et al.
(author)
-
Organic molecular beam deposition system and initial studies of organic layer growth
- 2006
-
In: Physica Scripta. - 1402-4896 .- 0031-8949. ; T126, s. 1-5
-
Journal article (peer-reviewed)abstract
- This work describes an organic molecular beam deposition system with substrate entry/exitchamber, buffer chamber and with the possibility to transfer substrate from a III–V molecularbeam deposition system. Flux calibrations of organic molecules and the initial growth oforganic layers are described. For this purpose, the molecules 3,4,9,10 perylene tetra carboxylicdianhydride and copper phtalocyanine were used. Layers were grown on oxidized andhydrogen passivated Si(100), Indium tin oxide and glass respectively. The growth wasinvestigated with atomic force microscopy, reflection high energy electron diffraction andultraviolet photoemission spectroscopy. An investigation with x-ray photoelectron and Ramanspectroscopy on the effect of atmospheric exposure is also included, showing little effect ofsurface pollution when the samples were handled carefully. The initial formation (monolayers)of copper phtalocyanine thin films was studied by ultraviolet photoemission spectroscopy.
|
|
