SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "WFRF:(Ivannikov A) "

Search: WFRF:(Ivannikov A)

  • Result 1-2 of 2
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Fattibene, P, et al. (author)
  • The 4th international comparison on EPR dosimetry with tooth enamel Part 1: Report on the results
  • 2011
  • In: Radiation Measurements. - : Elsevier. - 1350-4487 .- 1879-0925. ; 46:9, s. 765-771
  • Journal article (peer-reviewed)abstract
    • This paper presents the results of the 4th International Comparison of in vitro electron paramagnetic resonance dosimetry with tooth enamel, where the performance parameters of tooth enamel dosimetry methods were compared among sixteen laboratories from all over the world. The participating laboratories were asked to determine a calibration curve with a set of tooth enamel powder samples provided by the organizers. Nine molar teeth extracted following medical indication from German donors and collected between 1997 and 2007 were prepared and irradiated at the Helmholtz Zentrum Munchen. Five out of six samples were irradiated at 0.1, 0.2, 0.5, 1.0 and 1.5 Gy air kerma; and one unirradiated sample was kept as control. The doses delivered to the individual samples were unknown to the participants, who were asked to measure each sample nine times, and to report the EPR signal response, the mass of aliquots measured, and the parameters of EPR signal acquisition and signal evaluation. Critical dose and detection limit were calculated by the organizers on the basis of the calibration-curve parameters obtained at every laboratory. For calibration curves obtained by measuring every calibration sample three times, the mean value of the detection limit was 205 mGy, ranging from 56 to 649 mGy. The participants were also invited to provide the signal response and the nominal dose of their current dose calibration curve (wherever available), the critical dose and detection limit of which were also calculated by the organizers.
  •  
2.
  • Kalinina, E., et al. (author)
  • Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers
  • 2001
  • In: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 184:04-jan, s. 323-329
  • Journal article (peer-reviewed)abstract
    • The effect of ion implantation doping (ID) with high doses of Al followed by short high-temperature annealing of n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) has been studied. The comparative investigations of the structural and electrical properties, lateral and as a function of depth, in the CVD layers before and after Al ID p(+)n junction formations were determined by several different methods. Structural improvement of the CVD epitaxial layers close to Al ID p(+)n junction positions was revealed for the first time.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-2 of 2

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view