| 1. |
- Kamiyama, Satoshi, et al.
(author)
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Fluorescent SiC and its application to white light-emitting diodes
- 2011
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In: Journal of semiconductors. - : IOP Publishing. - 1674-4926. ; 32:1, s. 013004-1-013004-3
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Journal article (peer-reviewed)abstract
- Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.
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| 2. |
- Kamiyama, Satoshi, et al.
(author)
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White light-emitting diode based on fluorescent SiC
- 2012
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In: Thin Solid Films. - : Elsevier. - 0040-6090 .- 1879-2731. ; 522, s. 23-25
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Journal article (peer-reviewed)abstract
- A monolithic white light-emitting diode (LED,) comprising a combination of a fluorescent-SiC (f-SiC) substrate and a nitride-based near-UV LED stack, is proposed. On the basis of the recombination of donor and acceptor pairs, the f-SiC substrate works as a phosphor for visible light emission. By employing the Fast Sublimation Growth Process method, the high-quality f-SiC substrate doped with N and B exhibited a nonradiative carrier lifetime of 55 mu s and an internal quantum efficiency (IQE) of 40%. With increasing donor and acceptor doping concentrations, a high IQE was estimated even at a high excitation level.
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| 3. |
- Tran, Dat, et al.
(author)
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Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layers
- 2022
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In: Physical Review Materials. - : American Physical Society. - 2475-9953. ; 6:10
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Journal article (peer-reviewed)abstract
- AlxGa1-xN ternary alloys are emerging ultrawide band gap semiconductor materials for high-power electronics applications. The heat dissipation, which mainly depends on the thermal conductivity of the constituent material in the device structures, is the key for device performance and reliability. However, the reports on the thermal conductivity of AlxGa1-xN alloys are very limited. Here, we present a comprehensive study of the thermal conductivity of AlxGa1-xN in the entire Al composition range. Thick AlxGa1-xN layers grown by metal-organic chemical vapor deposition on GaN/sapphire and GaN/SiC templates are examined. The thermal conductivity measurements are done by the transient thermoreflectance method at room temperature. The effects of the Al composition, dislocation density, Si doping, and layer thickness on the thermal conductivity of AlxGa1-xN layers are thoroughly investigated. All experimental data are fitted by the modified Callaway model within the virtual crystal approximation, and the interplay between the different phonon scattering mechanisms is analyzed and discussed.
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