| 1. |
|
|
| 2. |
- Asghar, M., et al.
(author)
-
Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
- 2012
-
In: Physica B: Condensed Matter. - : Elsevier. - 0921-4526.
-
Conference paper (peer-reviewed)abstract
- In this study deep level transient spectroscopy has been performed on boron-nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N-A-N-D)similar to 3 x 10(17) cm(-3). We observed a hole H-1 majority carrier and an electron E-1 minority carrier traps in the device having activation energies E-nu + 0.24 eV, E-c -0.41 eV, respectively. The capture cross-section and trap concentration of H-1 and E-1 levels were found to be (5 x 10(-19) cm(2), 2 x 10(15) cm(-3)) and (1.6 x 10(-16) cm(2), 3 x 10(15) cm(-3)), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H-1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E-1 defect to a nitrogen donor.
|
|
| 3. |
- Asghar, M., et al.
(author)
-
Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
- 2012
-
In: Physica B: Condensed Matter. - : Elsevier. - 0921-4526.
-
Conference paper (peer-reviewed)abstract
- Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N-D-N-A) similar to 2.0 x 10(12) cm(-3), 2 x 10(16) cm(-3) and 9 x 10(15) cm(3), respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E-c - 0.39 eV, E-c - 0.67 eV and E-c - 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen-boron complex. A comparison with the published data revealed A, B and C to be E-1/E-2, Z(1)/Z(2) and R levels, respectively.
|
|
| 4. |
- Christle, David J., et al.
(author)
-
Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
- 2017
-
In: Physical Review X. - : AMER PHYSICAL SOC. - 2160-3308. ; 7:2
-
Journal article (peer-reviewed)abstract
- The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.
|
|
| 5. |
- Galeckas, A., et al.
(author)
-
Optical and microstructural investigation of heavy B-doping effects in sublimation-grown 3C-SiC
- 2018
-
In: Materials Science Forum. - : Trans Tech Publications Ltd. - 9783035711455 ; , s. 221-224
-
Conference paper (peer-reviewed)abstract
- In this work, a complementary microstructural and optical approach is used to define processing conditions favorable for the formation of deep boron-related acceptor centers that may provide a pathway for achieving an intermediate band behavior in highly B-doped 3C-SiC. The crystallinity, boron solubility and precipitation mechanisms in sublimation-grown 3C-SiC crystals implanted to 1-3 at.% B concentrations were investigated by STEM. The revealed defect formation and boron precipitation trends upon thermal treatment in the range 1100-2000oC have been crosscorrelated with the optical characterization results provided by imaging PL spectroscopy. We discuss optical activity of the implanted B ions in terms of both shallow acceptors and deep D-centers, a complex formed by a boron atom and a carbon vacancy, and associate the observed spectral developments upon annealing with the strong temperature dependence of the D-center formation efficiency, which is further enhanced by the presence of implantation-induced defects. © 2018 Trans Tech Publications, Switzerland.
|
|
| 6. |
- Gavryushin, V., et al.
(author)
-
Examination of Photoluminescence Temperature Dependencies in N-B Co-doped 6H-SiC
- 2014
-
In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). - 1757-8981 .- 1757-899X. ; 56:1, s. 012003-
-
Journal article (peer-reviewed)abstract
- Two overlapping photoluminescent (PL) bands with a peaks (half-width) at 1.95 eV (0.45 eV) and 2.15 eV (0.25 eV), correspondingly at 300 K, are observed in heavily B-N co-doped 6H-SiC epilayers under high-level excitation condition. The low energy band dominates at low temperatures and decreases towards 300 K which is assigned to DAP emission from the nitrogen trap to the deep boron (dB) with phonon-assistance. The 2.15 eV band slightly increases with temperature and becomes comparable with the former one at 300 K. We present a modelling comprising electron de-trapping from the N-trap, i.e. calculating trapping and de-trapping probabilities. The T-dependence of the 2.15 eV band can be explained by free electron emission from the conduction band into the dB center provided by similar phonon-assistance
|
|
| 7. |
- Gogova-Petrova, Daniela, et al.
(author)
-
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
- 2024
-
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. - : A V S AMER INST PHYSICS. - 0734-2101 .- 1520-8559. ; 42:2
-
Journal article (peer-reviewed)abstract
- A new growth approach, based on the hot-wall metalorganic chemical vapor deposition concept, is developed for high-quality homoepitaxial growth of Si-doped single-crystalline β -Ga 2 O 3 layers on (010)-oriented native substrates. Substrate annealing in argon atmosphere for 1 min at temperatures below 600 ° C is proposed for the formation of epi-ready surfaces as a cost-effective alternative to the traditionally employed annealing process in oxygen-containing atmosphere with a time duration of 1 h at about 1000 ° C. It is shown that the on-axis rocking curve widths exhibit anisotropic dependence on the azimuth angle with minima for in-plane direction parallel to the [001] and maximum for the [100] for both substrate and layer. The homoepitaxial layers are demonstrated to have excellent structural properties with a β -Ga 2 O 3 (020) rocking curve full-widths at half-maximum as low as 11 arc sec, which is lower than the corresponding one for the substrates (19 arc sec), even for highly Si-doped (low 10 19 cm − 3 range) layers. Furthermore, the structural anisotropy in the layer is substantially reduced with respect to the substrate. Very smooth surface morphology of the epilayers with a root mean square roughness value of 0.6 nm over a 5 × 5 μ m 2 area is achieved along with a high electron mobility of 69 cm 2 V − 1 s − 1 at a free carrier concentration n = 1.9 × 10 19 cm − 3 . These values compare well with state-of-the-art parameters reported in the literature for β -Ga 2 O 3 (010) homoepitaxial layers with respective Si doping levels. Thermal conductivity of 17.4 W m − 1 K − 1 is determined along the [010] direction for the homoepitaxial layers at 300 K, which approaches the respective value of bulk crystal (20.6 W m − 1 K − 1 ). This result is explained by a weak boundary effect and a low dislocation density in the homoepitaxial layers.
|
|
| 8. |
- Grivickas, V., et al.
(author)
-
Carrier lifetimes and influence of in-grown defects in N-B Co-doped 6H-SiC
- 2014
-
In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). ; 56:1, s. 012004-
-
Conference paper (peer-reviewed)abstract
- The thick N-B co-doped epilayers were grown by the fast sublimation growth method and the depth-resolved carrier lifetimes have been investigated by means of the free-carrier absorption (FCA) decay under perpendicular probe-pump measurement geometry. In some samples, we optically reveal in-grown carbon inclusions and polycrystalline defects of substantial concentration and show that these defects slow down excess carrier lifetime and prevent donor-acceptor pair photo luminescence (DAP PL). A pronounced electron lifetime reduction when injection level approaches the doping level was observed. It is caused by diffusion driven non-radiative recombination. However, the influence of surface recombination is small and insignificant at 300 K.
|
|
| 9. |
- Gulbinas, Karolis, et al.
(author)
-
Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers
- 2014
-
In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). - 1757-8981 .- 1757-899X. ; 56:1, s. 012005-
-
Journal article (peer-reviewed)abstract
- Thick 6H-SiC epilayers were grown using the fast sublimation method on low-off-axis substrates. They were co-doped with N and B impurities of ≈1019 cm−3 and (41016–51018) cm−3 concentration, respectively. The epilayers exhibited donor-acceptor pair (DAP) photoluminescence. The micro-Raman spectroscopic study exposed a compensated n-6H-SiC epilayer of common quality with some 3C-SiC inclusions. The compensation ratio of B through 200 μm thick epilayer varied in 20-30% range. The free carrier diffusivity was studied by transient grating technique at high injection level. The determined ambipolar diffusion coefficient at RT was found to decrease from 1.15 cm2/s to virtually 0 cm2/s with boron concentration increasing by two orders.
|
|
| 10. |
- Hens, Philip, et al.
(author)
-
Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds
- 2012
-
In: Materials letters (General ed.). - : Elsevier. - 0167-577X .- 1873-4979. ; 67:1, s. 300-302
-
Journal article (peer-reviewed)abstract
- Cubic silicon carbide is a promising material for medium power electronics operating at high frequencies and for the subsequent growth of gallium nitride for more efficient light emitting diodes. We present a new approach to produce freestanding cubic silicon carbide (3C-SiC) with the ability to obtain good crystalline quality regarding increased domain size and reduced defect density. This would pave the way to achieve substrates of 3C-SiC so that the applications of cubic silicon carbide material having selectively (111) or (001) oriented surfaces can be explored. Our method is based on the combination of the chemical vapor deposition method and the fast sublimation growth process. Thin layers of cubic silicon carbide grown heteroepitaxially on silicon substrates are for the first time used for a subsequent sublimation growth step to increase layer thicknesses. We have been able to realize growth of freestanding (001) oriented 3C-SiC substrates using growth rates around 120 μm/h and diameters of more than 10 mm. The structural quality from XRD rocking curve measurements of (001) oriented layers shows good FWHM values down to 78 arcsec measured over an area of 1 × 2 mm2, which is a quality improvement of 2–3 times compared with other methods like CVD.
|
|
