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- Danilov, Andrey, 1961, et al.
(author)
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Electronic transport in single molecule junctions: Control of the molecule-electrode coupling through intramolecular tunneling barriers
- 2008
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In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 8:1, s. 1-5
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Journal article (peer-reviewed)abstract
- We report on single molecule electron transport measurements of two oligophenylenevinylene (OPV3) derivatives placed in a nanogap between gold (Au) or lead (Pb) electrodes in a field effect transistor device. Both derivatives contain thiol end groups that allow chemical binding to the electrodes. One derivative has additional methylene groups separating the thiols from the delocalized pi-electron system. The insertion of methylene groups changes the open state conductance by 3-4 orders of magnitude and changes the transport mechanism from a coherent regime with finite zero-bias conductance to sequential tunneling and Coulomb blockade behavior.
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- Danilov, Andrey, 1961, et al.
(author)
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Single molecular devices with fullerenes and oligophenylenevinylene (OPV) derivatives
- 2005
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In: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST. - 078039268X ; , s. 481-484
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Conference paper (peer-reviewed)abstract
- We have studied low temperature electron transport in three terminal single molecule transistors. Devices with OPV revealed a relation between transistor characteristics and position of molecular redox potentials strongly influenced by proximity to the metal. Fullerene based devices demonstrate negative differential resistance and indicate strong coupling of fullerene to gold.
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- Kafanov, Serguei, 1977, et al.
(author)
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Charge noise in single-electron transistors and charge qubits may be caused by metallic grains
- 2008
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In: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969. ; 78:12, s. 125411-
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Journal article (peer-reviewed)abstract
- We report on measurements of low-frequency noise in a single-electron transistor (SET) from a few hertz up to 10 MHz. Measurements were done for different bias and gate voltages, which allow us to separate noise contributions from different noise sources. We find a 1/f noise spectrum with two Lorentzians superimposed. The cut-off frequency of one of the Lorentzians varies systematically with the potential of the SET island. Our data is consistent with two single-charge fluctuators situated close to the tunnel barrier. We suggest that these are due to random charging of aluminum grains, each acting as a single-electron box with tunnel coupling to one of the leads and capacitively coupled to the SET island. We are able to fit the data to our model and extract parameters for the fluctuators.
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- Kafanov, Serguei, 1977, et al.
(author)
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Measurement of the shot noise in a single-electron transistor
- 2009
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In: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969. ; 80:15, s. 155320-
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Journal article (peer-reviewed)abstract
- We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.
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- Kafanov, Serguei, 1977
(author)
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Noise Properties of the Single Electron Transistor
- 2008
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Doctoral thesis (other academic/artistic)abstract
- The Single Electron Transistor (SET) is a sensitive electrometer with a charge sensitivityultimately limited by noise. In this thesis we present measurements of noiseproperties and charge sensitivity of the radio-frequency Single Electron Transistor.The charge sensitivity for the radio frequency Single Electron Transistor (rf-SET)was measured, as a function of different parameters. The demonstrated result is betterthan the previously best reported sensitivity value both at 40 mK, and at 4.2K. Thecharge sensitivity at 40mK is 0.9μe/√Hz, 5 times worse than theoretical limit. Thecharge sensitivity at 4.2K is 1.8 μe/√Hz, only 1.6 times worse then the theoreticallimit for this temperature. The limiting factor is the amplifier noise but shot/thermalnoise starts to be important.The SET was operated in the radio frequency mode which allowed to measure thelow frequency noise of the SET in a wide frequency range from few Hz up to tenthsMHz. Noise spectra were measured over a wide range of the gate voltage and biasvoltage. In the data analysis we are able to separate noise contributions from differentnoise sources in the SET.From the low frequency noise measurements, we conclude that the noise spectrumin the frequency range (f > 10 kHz) is dominated by electron capture and emissionkinetics on a electrostatic trap most probably consisting of a metallic grains outside thetunnel barrier.We have also introduced a method of direct measurement of the shot noise in theSET in low-frequency limit. We have measured the shot noise properties of the singleelectron transistor with high tunnel barrier transparencies, as a function of bias voltageand gate charge and find a good agreement with the orthodox theory for single electrontunneling.
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- Kafanov, Serguei, 1977
(author)
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The Radio Frequency Single-Electron Transistor: Noise Properties and its Potential for Detecting Electrons on Helium
- 2006
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Licentiate thesis (other academic/artistic)abstract
- In this thesis the noise in the single electron transistor (SET) has been investigated.The charge sensitivity for the radio frequency single electron transistor(RF-SET) was measured. The demonstrated result is better than the previouslybest reported value both at 40 mK, and at 4.2 K. The demonstratedcharge sensitivity at 40 mK is 0.9μe/√Hz a 5 times worse than theoreticallimit. The charge sensitivity at 4.2K is 1.8μe/√Hz only 1.6 times worse thenthe theoretical limit for this temperature.The SET was operated in the radio frequency mode which allowed tomeasure the low frequency noise of the SET in a wide frequency range fromfew Hz up to tenths MHz. Noise spectra were measured over a wide rangeof the gate voltage and bias voltage. In the data analysis we are able toseparate noise contributions from different noise sources in the SET.From the low frequency noise measurements, we conclude that the noisespectra at low frequencies (f ∼ 1 kHz) is determined by a single chargefluctuator close to our SET. The noise spectra at the frequency range (f >10 kHz) is dominated by resistance noise in the different junctions and wecan conclude that the excess noise comes from the resistance noise of one ofthe tunnel barriers.We have introduced a method of direct measurement of the shot noisein the SET at f = 350 MHz. We have measured the shot noise propertiesof the single electron transistor with high tunnel barrier transparencies; andcompared results with the orthodox theory for single electron tunneling.In the final part of this thesis preliminary results on experiments withelectrons above a superfluid helium surface is reported.
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