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1.
  • Azarov, A. Yu., et al. (author)
  • Structural damage in ZnO bombarded by heavy ions
  • 2010
  • In: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 84:8, s. 1058-1061
  • Journal article (peer-reviewed)abstract
    • The effect of implantation parameters on damage build-up in ZnO bombarded with Bi and Er ions is studied by Rutherford backscattering/channelling spectrometry. The results show that the damage accumulation behaviour in ZnO is different dramatically from that in other semiconductors. In particular, a variation of implantation parameters, such as collision cascade density, sample temperature and ion flux, has only a minor influence on the damage accumulation in the crystal bulk for the case of such heavy ions. Moreover, an intermediate damage peak, between the surface and bulk defect peaks, is observed for all the irradiation conditions studied. The cascade density affects the behaviour of this intermediate peak with increasing ion dose.
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2.
  • Azarov, Alexander, et al. (author)
  • Effect of collision cascade density on radiation damage in SiC
  • 2009
  • In: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 267:8-9, s. 1247-1250
  • Journal article (peer-reviewed)abstract
    • The damage accumulation in 6H-SiC bombarded at room temperature with 1.3 keV/amu atomic P+ ions and small cluster ions PFn+ (n = 2 and 4) have been studied by Rutherford backscattering spectrometry in channeling mode. Results show that collision cascade density strongly affects damage buildup in SiC. The cluster ion bombardment of SiC produces more stable defects both near the surface and in the region between the surface and bulk defect peaks than irradiation by atomic ions.
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