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  • Strokan, N.B., et al. (author)
  • Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
  • 2004
  • In: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:7, s. 807-811
  • Journal article (peer-reviewed)abstract
    • Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Syväjärvi, Mikael (1)
Yakimova, Rositsa (1)
Lebedev, A.A. (1)
Savkina, N.S. (1)
Ivanov, A M (1)
Strokan, N B (1)
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Kozlovskii, V.V. (1)
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University
Linköping University (1)
Language
English (1)
Year
2004 (1)

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