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Sökning: WFRF:(Krellner C.)

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1.
  • Güttler, M., et al. (författare)
  • Divalent EuRh 2 Si 2 as a reference for the Luttinger theorem and antiferromagnetism in trivalent heavy-fermion YbRh 2 Si 2
  • 2019
  • Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 10:1
  • Tidskriftsartikel (refereegranskat)abstract
    • Application of the Luttinger theorem to the Kondo lattice YbRh 2 Si 2 suggests that its large 4f-derived Fermi surface (FS) in the paramagnetic (PM) regime should be similar in shape and volume to that of the divalent local-moment antiferromagnet (AFM) EuRh 2 Si 2 in its PM regime. Here we show by angle-resolved photoemission spectroscopy that paramagnetic EuRh 2 Si 2 has a large FS essentially similar to the one seen in YbRh 2 Si 2 down to 1 K. In EuRh 2 Si 2 the onset of AFM order below 24.5 K induces an extensive fragmentation of the FS due to Brillouin zone folding, intersection and resulting hybridization of the Fermi-surface sheets. Our results on EuRh 2 Si 2 indicate that the formation of the AFM state in YbRh 2 Si 2 is very likely also connected with similar changes in the FS, which have to be taken into account in the controversial analysis and discussion of anomalies observed at the quantum critical point in this system.
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2.
  • Chikina, A., et al. (författare)
  • Valence instability in the bulk and at the surface of the antiferromagnet SmRh2Si2
  • 2017
  • Ingår i: Physical Review B - Condensed Matter and Materials Physics. - 1098-0121. ; 95:15
  • Tidskriftsartikel (refereegranskat)abstract
    • Using resonant angle-resolved photoemission spectroscopy and electron band-structure calculations, we explore the electronic structure and properties of Sm atoms at the surface and in the bulk of the antiferromagnet SmRh2Si2. We show that the Sm atoms reveal weak mixed-valent behavior both in the bulk and at the surface. Although trivalent 4f emission strongly dominates, a small divalent 4f signal near the Fermi energy can be clearly resolved for surface and bulk Sm atoms. This behavior is quite different to most other Sm-based materials which typically experience a surface valence transition to a divalent state of Sm atoms at the surface. This phenomenon is explained in analogy to the isostructural Ce compound, where strong 4f hybridization stabilizes mixed-valent ground state both in the bulk and at the surface, and which were described in the light of the single-impurity Anderson model. Implications for other RERh2Si2 (RE = rare-earth elements) compounds are discussed.
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3.
  • Fedorov, A. V., et al. (författare)
  • Insight into the Temperature Evolution of Electronic Structure and Mechanism of Exchange Interaction in EuS
  • 2021
  • Ingår i: Journal of Physical Chemistry Letters. - : American Chemical Society (ACS). - 1948-7185. ; 12:34, s. 8328-8334
  • Tidskriftsartikel (refereegranskat)abstract
    • Discovered in 1962, the divalent ferromagnetic semiconductor EuS (TC = 16.5 K, Eg = 1.65 eV) has remained constantly relevant to the engineering of novel magnetically active interfaces, heterostructures, and multilayer sequences and to combination with topological materials. Because detailed information on the electronic structure of EuS and, in particular, its evolution across TC is not well-represented in the literature but is essential for the development of new functional systems, the present work aims at filling this gap. Our angle-resolved photoemission measurements complemented with first-principles calculations demonstrate how the electronic structure of EuS evolves across a paramagnetic-ferromagnetic transition. Our results emphasize the importance of the strong Eu 4f-S 3p mixing for exchange-magnetic splittings of the sulfur-derived bands as well as coupling between f and d orbitals of neighboring Eu atoms to derive the value of TC accurately. The 4f-3p mixing facilitates the coupling between 4f and 5d orbitals of neighboring Eu atoms, which mainly governs the exchange interaction in EuS.
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4.
  • Generalov, A., et al. (författare)
  • Strong spin-orbit coupling in the noncentrosymmetric Kondo lattice
  • 2018
  • Ingår i: Physical Review B. - 2469-9950. ; 98:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Strong spin-orbit coupling (SOC) in combination with a lack of inversion symmetry and exchange magnetic interaction proves to be a sophisticated instrument allowing efficient control of the spin orientation, energy and trajectories of two-dimensional (2D) electrons and holes trapped at surfaces or interfaces. Exploiting Kondo-related phenomena and crystal-electric-field effects at reduced dimensionalities opens new opportunities to handle their spin-dependent properties offering novel functionalities. We consider here a 2D Kondo lattice represented by a Si-Ir-Si-Yb (SISY) surface block of the heavy-fermion material YbIr2Si2. We show that the Kondo interaction with 4f moments allows finely tuning the group velocities of the strongly spin-polarized carriers in 2D itinerant states of this noncentrosymmetric system. To unveil the peculiarities of this interaction, we used angle-resolved photoemission measurements complemented by first-principles calculations. We established that the strong SOC of the Ir atoms induces spin polarization of the 2D states in SISY block, while the 2D lattice of Yb 4f moments acts as a source for coherent f-d interplay. The strong SOC and lack of inversion symmetry turn out to lead not only to the anticipated Rashba-like splitting of the 2D states, but also to spin splitting of the 4f Kramers doublets. They couple temperature-dependently to the spin-polarized 2D states and thereby guide the properties of the latter.
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5.
  • Schulz, S., et al. (författare)
  • Classical and cubic Rashba effect in the presence of in-plane 4f magnetism at the iridium silicide surface of the antiferromagnet GdIr2Si2
  • 2021
  • Ingår i: Physical Review B. - 2469-9950. ; 103:3
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a combined experimental and theoretical study of the two-dimensional electron states at the iridium-silicide surface of the antiferromagnet GdIr2Si2 above and below the Néel temperature. Using angle-resolved photoemission spectroscopy (ARPES) we find a significant spin-orbit splitting of the surface states in the paramagnetic phase. By means of ab initio density-functional-theory (DFT) calculations we establish that the surface electron states that reside in the projected band gap around the M¯ point exhibit very different spin structures which are governed by the conventional and the cubic Rashba effect. The latter is reflected in a triple spin winding, i.e., the surface electron spin reveals three complete rotations upon moving once around the constant energy contours. Below the Néel temperature, our ARPES measurements show an intricate photoemission intensity picture characteristic of a complex magnetic domain structure. The orientation of the domains, however, can be clarified from a comparative analysis of the ARPES data and their DFT modeling. To characterize a single magnetic domain picture, we resort to the calculations and scrutinize the interplay of the Rashba spin-orbit coupling field with the in-plane exchange field, provided by the ferromagnetically ordered 4f moments of the near-surface Gd layer.
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6.
  • Usachov, D. Yu, et al. (författare)
  • Cubic Rashba Effect in the Surface Spin Structure of Rare-Earth Ternary Materials
  • 2020
  • Ingår i: Physical Review Letters. - 0031-9007. ; 124:23
  • Tidskriftsartikel (refereegranskat)abstract
    • Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k·p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.
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7.
  • Windsor, Y. W., et al. (författare)
  • Exchange scaling of ultrafast angular momentum transfer in 4f antiferromagnets
  • 2022
  • Ingår i: Nature Materials. - : Nature Publishing Group. - 1476-1122 .- 1476-4660. ; 21:5, s. 514-517
  • Tidskriftsartikel (refereegranskat)abstract
    • Ultrafast manipulation of magnetism bears great potential for future information technologies. While demagnetization in ferromagnets is governed by the dissipation of angular momentum1-3, materials with multiple spin sublattices, for example antiferromagnets, can allow direct angular momentum transfer between opposing spins, promising faster functionality. In lanthanides, 4f magnetic exchange is mediated indirectly through the conduction electrons4 (the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction), and the effect of such conditions on direct spin transfer processes is largely unexplored. Here, we investigate ultrafast magnetization dynamics in 4f antiferromagnets and systematically vary the 4f occupation, thereby altering the magnitude of the RKKY coupling energy. By combining time-resolved soft X-ray diffraction with ab initio calculations, we find that the rate of direct transfer between opposing moments is directly determined by this coupling. Given the high sensitivity of RKKY to the conduction electrons, our results offer a useful approach for fine tuning the speed of magnetic devices.
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8.
  • Chernenkaya, A., et al. (författare)
  • Microscopic origin of the charge transfer in single crystals based on thiophene derivatives : A combined NEXAFS and density functional theory approach
  • 2016
  • Ingår i: Journal of Chemical Physics. - : AIP Publishing. - 0021-9606 .- 1089-7690. ; 145:3
  • Tidskriftsartikel (refereegranskat)abstract
    • We have investigated the charge transfer mechanism in single crystals of DTBDT-TCNQ and DTBDT-F4TCNQ (where DTBDT is dithieno[2,3-d;2′,3′-d′] benzo[1,2-b;4,5-b′]dithiophene) using a combination of near-edge X-ray absorption spectroscopy (NEXAFS) and density functional theory calculations (DFT) including final state effects beyond the sudden state approximation. In particular, we find that a description that considers the partial screening of the electron-hole Coulomb correlation on a static level as well as the rearrangement of electronic density shows excellent agreement with experiment and allows to uncover the details of the charge transfer mechanism in DTBDT-TCNQ and DTBDT-F4 TCNQ, as well as a reinterpretation of previous NEXAFS data on pure TCNQ. Finally, we further show that almost the same quality of agreement between theoretical results and experiment is obtained by the much faster Z+1/2 approximation, where the core hole effects are simulated by replacing N or F with atomic number Z with the neighboring atom with atomic number Z+1/2.
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9.
  • Generalov, Alexander, et al. (författare)
  • Spin Orientation of Two-Dimensional Electrons Driven by Temperature-Tunable Competition of Spin-Orbit and Exchange-Magnetic Interactions
  • 2017
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 17:2, s. 811-820
  • Tidskriftsartikel (refereegranskat)abstract
    • Finding ways to create and control the spin-dependent properties of two-dimensional electron states (2DESs) is a major challenge for the elaboration of novel spin-based devices. Spin-orbit and exchange-magnetic interactions (SOI and EMI) are two fundamental mechanisms that enable access to the tunability of spin-dependent properties of carriers. The silicon surface of HoRh2Si2 appears to be a unique model system, where concurrent SOI and EMI can be visualized and controlled by varying the temperature. The beauty and simplicity of this system lie in the 4f moments, which act as a multiple tuning instrument on the 2DESs, as the 4f projections parallel and perpendicular to the surface order at essentially different temperatures. Here we show that the SOI locks the spins of the 2DESs exclusively in the surface plane when the 4f moments are disordered: the Rashba-Bychkov effect. When the temperature is gradually lowered and the system experiences magnetic order, the rising EMI progressively competes with the SOI leading to a fundamental change in the spin-dependent properties of the 2DESs. The spins rotate and reorient toward the out-of-plane Ho 4f moments. Our findings show that the direction of the spins and the spin-splitting of the two-dimensional electrons at the surface can be manipulated in a controlled way by using only one parameter: the temperature.
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10.
  • Mende, Max, et al. (författare)
  • Strong Rashba Effect and Different f−d Hybridization Phenomena at the Surface of the Heavy-Fermion Superconductor CeIrIn 5
  • 2022
  • Ingår i: Advanced Electronic Materials. - : Wiley. - 2199-160X .- 2199-160X. ; 8:3
  • Tidskriftsartikel (refereegranskat)abstract
    • New temperature scales and remarkable differences from bulk properties have increasingly placed the surfaces of strongly correlated f materials into the focus of research activities. Applying first-principles calculations and angle-resolved photoelectron spectroscopy measurements, a strong Rashba effect and spin-split surface states at the CeIn surface of the heavy-fermion superconductor CeIrIn5 are revealed. The unveiled 4f-derived electron landscape is remarkably distinct for surface and bulk Ce implying the existence of novel temperature scales near the surface region in this material. These results show that ab initio calculations can reliably predict the unusual electronic and spin structure of surfaces of strongly correlated 4f systems where Rashba spin-orbit-coupling phenomena emerge. It is suggested that the structural blocks of such materials can be combined with magnetically active layers for engineering of novel nanostructural objects with appropriate substrates where the diversity of f-driven properties can be applied for the development of novel functionalities.
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