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  • Gogova, D., et al. (author)
  • Investigation of the structural and optical properties of free-standing GaN grown by HVPE
  • 2005
  • In: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 38:14, s. 2332-2337
  • Journal article (peer-reviewed)abstract
    • The potential of the high-growth rate hydride vapour phase epitaxy technique and laser lift-off for the fabrication of free-standing GaN substrates is explored. Structural and optical properties of 300 νm thick free-standing GaN have been investigated employing different analytical techniques. The x-ray diffraction (XRD) measurements prove good crystalline quality of the material grown. A comparatively low value of (3 ± 1) × 1016 cm-3 of Ga vacancy-related defects is inferred from positron annihilation spectroscopy data. Complete strain relaxation is observed on the Ga-polar face of the free-standing GaN by XRD and Raman spectroscopy measurements. The strain-free homoepitaxy will significantly reduce the defect density, and thus an improvement of the device performance and lifetime can be realized. © 2005 IOP Publishing Ltd.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Saarinen, K. (1)
Tuomisto, F. (1)
Monemar, Bo, 1942- (1)
Hemmingsson, Carl, 1 ... (1)
Talik, E. (1)
Gogova, D. (1)
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Kruczek, M. (1)
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University
Linköping University (1)
Language
English (1)
Year
2005 (1)

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